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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=120V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=120V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESSGE Solid State GE Solid State |  | | |
N-ChannelEnhancement-ModePowerField-EffectTransistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | | |
N-ChannelEnhancement-ModePowerField-EffectTransistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
UCC |
23+ |
SOP8 |
12000 |
全新原装假一赔十 |
|||
GESS |
23+ |
NA |
39960 |
只做进口原装,终端工厂免费送样 |
|||
HARRIS(哈利斯) |
23+ |
TO3 |
6000 |
诚信服务，绝对原装原盘 |
|||
MOSPEC |
2023+ |
TO-3 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
HARRIS/哈里斯 |
2046+ |
9852 |
只做原装正品现货!或订货假一赔十! |
||||
HARRIS(哈利斯) |
20+ |
TO-3 |
3000 |
||||
INTERSIL |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
HARRIS |
2020+ |
N/A |
174 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
HARRIS |
23+ |
TO-3 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
HARRIS |
1999 |
TO-3 |
1965 |
原装现货海量库存欢迎咨询 |
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DdatasheetPDF页码索引
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