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丝印代码：NCE80H15；NCE N-Channel Enhancement Mode Power MOSFET

General Features ● VDS =80V,ID =150A RDS(ON)

丝印代码：NCE80T320；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T320；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T320；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T320D；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T320D；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T320D；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T320F；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T320F；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T320F；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T420；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T420；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T420F；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T420F；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T560；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T560；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T560；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T560D；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T560D；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T560D；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T560F；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T560F；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80T560F；N-Channel Super Junction Power MOSFET Ⅲ

General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

丝印代码：NCE80TC65BT；650V, 80A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：NCE80TD60BP；600V, 80A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：NCE80TD60BT；600V, 80A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 600V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：NCE80TD65BP；650V, 80A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：NCE80TD65BT；650V, 80A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：NCE80TD65BT4；650V, 80A, Trench FS II Fast IGBT

General Description Using NCE's proprietary trench design and advanced FS (Field Stop) second generation technology, the 650V Trench FSII IGBT offers superior conduction and switching performances, and easy parallel operation; Features  Trench FSII Technology offering  Very low VCE(sat)

丝印代码：NCE8290B；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8290B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =90A RDS(ON)

丝印代码：NCE8295A；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON)

丝印代码：NCE8295AD；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295AD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON)

丝印代码：NCE8295AG；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295AG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Application ●Power switching application ● Hard switched and High frequency circuit

丝印代码：NCE8295AI；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295AI uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON)

丝印代码：NCE8295AK；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8295AK uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features ● VDS =82V,ID =95A RDS(ON)

丝印代码：NCE82H140；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE82H140 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Features ● VDS = 82V,ID =140A RDS(ON)

丝印代码：NCE82H140D；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE82H140D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 82V,ID =140A RDS(ON)

丝印代码：NCE82H140LL；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE82H140LL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply G

丝印代码：NCE82H160；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE82H160 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 82V,ID =160A RDS(ON)

丝印代码：NCE82H160D；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE82H160D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 82V,ID =160A RDS(ON)

丝印代码：NCE85H25；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE85H25 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 85V,ID =250A RDS(ON)

丝印代码：NCE85H25T；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE85H25T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 85V,ID =250A RDS(ON)

丝印代码：NCE8736；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8736 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =21A RDS(ON)

丝印代码：NCE80T420F；N-Channel Super Junction Power MOSFET

文件：646.26 Kbytes Page：7 Pages

丝印代码：NCE80T420；N-Channel Super Junction Power MOSFET

文件：646.26 Kbytes Page：7 Pages

丝印代码：NCE8651Q；N-Channel Enhancement Mode Power MOSFET

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NCE N-Channel Enhancement Mode Power MOSFET

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