NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE8736 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =21A RDS(ON)

12-200V N-Channel Trench MOSFET

30V N-Channel MOSFET

Applications Synchronous MOSFET for Notebook Processor Power Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits Very Low RDS(on) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100 Tested for RG Lead -Free VDS (V)

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Low Gate Charge ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG ● Lead -Free Applications ● Synchronous MOSFET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems

Synchronous MOSFET for Notebook Processor Power

Benefits ● Very Low RDS(on) at 4.5V VGS ● Low Gate Charge ● Fully Characterized Avalanche Voltage and Current ● 100 Tested for RG ● Lead -Free Applications ● Synchronous MOSFET for Notebook Processor Power ● Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems

High efficiency,Ultralow distortion,Constant large volume,Sixth generation Class K Audio Amplifier

文件：827.19 Kbytes Page：23 Pages

High efficiency,Ultralow distortion,Constant large volume,Sixth generation Class K Audio Amplifier

文件：827.19 Kbytes Page：23 Pages