Description

The NCE8295AI uses advanced trench technology and design

to provide excellent RDS(ON) with low gate charge. This device is

suitable for use in PWM, load switching and general purpose

applications. General Features

● VDS =82V,ID =95A

RDS(ON) < 8.0 mΩ @ VGS=10V (Typ:6.6mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Special designed for convertors and power controls

● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Application

● Power switching application

● Hard switched and High frequency circuits

● Uninterruptible power supply