Description

The NCE82H160 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

● VDS = 82V,ID =160A

RDS(ON) < 4.5mΩ @ VGS=10V (Typ:3.8mΩ)

● Special process technology for high ESD capability

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

● Excellent package for good heat dissipation

Application

● Power switching application

● Hard switched and high frequency circuits

● Uninterruptible power supply