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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCD5 | CIT SWITCH 文件：252.92 Kbytes Page：3 Pages | CIT |   | |
NCD57000 mini Evaluation Board Users Manual NCD57000 Description NCD57000 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accu | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver NCD57000 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver NCD57000 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver NCD57000 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver NCD57001 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver NCD57001 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver NCD57001 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver NCD57001F is a variant of NCD57001 with reduced Soft−Turn−Off time suited to drive large IGBTs or power modules. NCD57001F is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver NCD57001F is a variant of NCD57001 with reduced Soft−Turn−Off time suited to drive large IGBTs or power modules. NCD57001F is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver NCD57001F is a variant of NCD57001 with reduced Soft−Turn−Off time suited to drive large IGBTs or power modules. NCD57001F is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features | ONSEMI 安森美半导体 | | ||
High Current IGBT Gate Drivers The NCx5703y are high−current, high−performance stand−alone IGBT drivers for high power applications that include solar inverters, motor control and uninterruptible power supplies. The devices offer a cost−effective solution by eliminating external output buffer. Devices protection features in | ONSEMI 安森美半导体 | | ||
High Current IGBT Gate Drivers The NCV/NCD5705B is a high−current, high−performance stand−alone IGBT driver for high power automotive applications that include PTC heaters, traction inverters, high voltage DC−DC and other auxiliary subsystems. The device offers a cost−effective solution by eliminating external output buffer | ONSEMI 安森美半导体 | | ||
High Current IGBT Gate Drivers The NCV/NCD5705B is a high−current, high−performance stand−alone IGBT driver for high power automotive applications that include PTC heaters, traction inverters, high voltage DC−DC and other auxiliary subsystems. The device offers a cost−effective solution by eliminating external output buffer | ONSEMI 安森美半导体 | | ||
High Current IGBT/MOSFET Gate Drivers IGBT drivers for high power applications that include solar inverters, motor control and uninterruptible power supplies. The devices offer a cost−effective solution by eliminating external output buffer. Devices protection features include accurate Under−voltage−lockout (UVLO), desaturation pr | ONSEMI 安森美半导体 | | ||
High Current IGBT/MOSFET Gate Drivers IGBT drivers for high power applications that include solar inverters, motor control and uninterruptible power supplies. The devices offer a cost−effective solution by eliminating external output buffer. Devices protection features include accurate Under−voltage−lockout (UVLO), desaturation pr | ONSEMI 安森美半导体 | | ||
High Current IGBT/MOSFET Gate Drivers IGBT drivers for high power applications that include solar inverters, motor control and uninterruptible power supplies. The devices offer a cost−effective solution by eliminating external output buffer. Devices protection features include accurate Under−voltage−lockout (UVLO), desaturation pr | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated Compact IGBT Gate Driver with DESAT NCx57084 is a high current single channel IGBT gate driver with 2.5 kVrms internal galvanic isolation designed for high system efficiency and reliability in high power applications. The driver includes DESAT short circuit protection with soft turn off and fault reporting in a narrow body SOIC− | ONSEMI 安森美半导体 | | ||
Isolated Compact IGBT Gate Driver with Current Sense NCx57085 is a high current single channel IGBT gate driver with 2.5 kVrms internal galvanic isolation designed for high system efficiency and reliability in high power applications. The driver includes Current Sense function with soft turn off and fault reporting in a narrow body SOIC8 packag | ONSEMI 安森美半导体 | | ||
Isolated Compact IGBT Gate Driver with Current Sense NCx57085 is a high current single channel IGBT gate driver with 2.5 kVrms internal galvanic isolation designed for high system efficiency and reliability in high power applications. The driver includes Current Sense function with soft turn off and fault reporting in a narrow body SOIC8 packag | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options | ONSEMI 安森美半导体 | | ||
Isolated High Current Gate Driver NCx5710y is a high−current single channel IGBT / SiC / MOSFET driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and READY outputs, active MILLER CLAMP, accurate UV | ONSEMI 安森美半导体 | | ||
Isolated High Current Gate Driver NCx5710y is a high−current single channel IGBT / SiC / MOSFET driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and READY outputs, active MILLER CLAMP, accurate UV | ONSEMI 安森美半导体 | | ||
Half Bridge Gate Driver (Isolated High & Non- Isolated Low) The NCD57200 is a high voltage gate driver with one non- isolated low side gate driver and one galvanically isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. Isolated high side driver can be powered with an isolated power supply or with Boot | ONSEMI 安森美半导体 | | ||
Half Bridge Gate Driver (Isolated High & Non- Isolated Low) The NCD57200 is a high voltage gate driver with one non- isolated low side gate driver and one galvanically isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. Isolated high side driver can be powered with an isolated power supply or with Boot | ONSEMI 安森美半导体 | | ||
Half Bridge Gate Driver (Isolated High & Non- Isolated Low) The NCD57200 is a high voltage gate driver with one non- isolated low side gate driver and one galvanically isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. Isolated high side driver can be powered with an isolated power supply or with Boot | ONSEMI 安森美半导体 | | ||
Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | | ||
Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | | ||
Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | | ||
Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | |
NCD5产品属性
- 类型
描述
- 型号
NCD5
- 制造商
CIT
- 制造商全称
CIT Relay & Switch
- 功能描述
CIT SWITCH
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
SOP16 |
68000 |
绝对原装正品现货假一罚十 |
|||
ON Sem |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
Onsemi |
22+ |
SOP16 |
1000 |
安森美现货库存,终端可送样 |
|||
ON/安森美 |
23+ |
SOP16 |
13138 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ON(安森美) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON |
21+ |
SOP16 |
15000 |
全新原装公司现货
|
|||
ONSEMI/安森美 |
25+ |
SOIC-8 |
32000 |
ONSEMI/安森美全新特价NCD57080CDR2G即刻询购立享优惠#长期有货 |
|||
ON(安森美) |
24+ |
SOIC-16 |
13048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
ON/安森美 |
2152+ |
SOP-16 |
8000 |
原装正品现货假一罚十 |
|||
ON |
18+19+ |
SOP |
4897 |
只做原装正品假一赔十为客户做到零风险!! |
NCD5规格书下载地址
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NCD5数据表相关新闻
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2022-11-30NCC黑金刚EMHL160ARA221MF80G-CAR代理渠道
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2020-4-28
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