| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCD57080 | Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 |   | |
NCD57080 | Isolated High Current Gate Driver | ONSEMI 安森美半导体 | | |
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y are high−current single channel IGBT/MOSFET gate drivers with 3.75 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer optio | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver 文件：646.81 Kbytes Page：24 Pages | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver 文件：646.81 Kbytes Page：24 Pages | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver 文件：646.81 Kbytes Page：24 Pages | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver 文件：646.81 Kbytes Page：24 Pages | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver 文件：646.81 Kbytes Page：24 Pages | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver 文件：646.81 Kbytes Page：24 Pages | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
SOIC-8 |
25000 |
ON全系列可订货 |
|||
ONSEMI/安森美 |
25+ |
SOIC-8 |
32000 |
ONSEMI/安森美全新特价NCD57080CDR2G即刻询购立享优惠#长期有货 |
|||
ONSEMI/安森美 |
2450+ |
SOP8 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ON |
24+ |
SOIC-8 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
ONSEMI/安森美 |
25+ |
SOP8 |
3625 |
全新原装正品支持含税 |
|||
onsemi(安森美) |
24+ |
SOP-8 |
2669 |
深耕行业12年,可提供技术支持。 |
|||
ON(安森美) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
ON |
24+ |
NA |
3000 |
进口原装 假一罚十 现货 |
|||
ON/安森美 |
2223+ |
26800 |
只做原装正品假一赔十为客户做到零风险 |
||||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
NCD57080规格书下载地址
NCD57080参数引脚图相关
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DdatasheetPDF页码索引
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