位置：首页 > IC中文资料 > NCD57000DWR2G
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCD57000DWR2G | Isolated High Current IGBT Gate Driver NCD57000 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot | ONSEMI 安森美半导体 |   | |
NCD57000DWR2G | Isolated High Current IGBT Gate Driver 文件：230.86 Kbytes Page：14 Pages | ONSEMI 安森美半导体 | | |
NCD57000DWR2G | 封装/外壳：16-SOIC（0.295"，7.50mm 宽） 包装：管件 描述：IC GATE DRVR HALF-BRIDGE 16SOIC 集成电路（IC） 栅极驱动器 | ONSEMI 安森美半导体 | | |
NCD57000DWR2G | Isolated high current and high efficiency IGBT gate driver with internal galvanic isolation. | ONSEMI 安森美半导体 | | |
Isolated High Current IGBT Gate Driver NCV57000 is a high−current single channel IGBT driver with internal galvanic isolation, designed for high system efficiency and reliability in high power applications. Its features include complementary inputs, open drain FAULT and Ready outputs, active Miller clamp, accurate UVLOs, DESAT prot | ONSEMI 安森美半导体 | | ||
Isolated High Current IGBT Gate Driver 文件：230.92 Kbytes Page：14 Pages | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
24+ |
SOIC-16W |
25000 |
ON全系列可订货 |
|||
ON(安森美) |
25+ |
标准封装 |
8800 |
公司只做原装,详情请咨询 |
|||
ON(安森美) |
24+ |
N/A |
18000 |
原装正品现货支持实单 |
|||
ON/安森美 |
24+ |
SOIC-16 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
onsemi |
25+ |
16-SOIC(0.295 7.50mm 宽) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
onsemi |
2023+ |
16SOIC |
5230 |
安罗世纪电子只做原装正品货 |
|||
ON(安森美) |
23+ |
25900 |
新到现货,只有原装 |
||||
onsemi(安森美) |
2021+ |
SOIC-16 |
499 |
||||
ON/安森美 |
21+ |
SOP16 |
10000 |
原装现货假一罚十 |
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NCD57000DWR2G规格书下载地址
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DdatasheetPDF页码索引
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