| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NCD57252 | Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 |   | |
NCD57252 | Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | | |
NCD57252 | 隔离式双通道IGBT栅极驱动器 | ONSEMI 安森美半导体 | | |
Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | | ||
Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | | ||
Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | | ||
Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | | ||
Isolated Dual Channel IGBT/MOSFET Gate Driver NCx5725y are high−current two channel isolated IGBT/MOSFET gate drivers with 2.5 or 5 kVrms* internal galvanic isolation from input to each output and functional isolation between the two output channels. The device accepts 3.3 V to 20 V bias voltage and signal levels on the input side and up | ONSEMI 安森美半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON(安森美) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
ON |
24+ |
SOIC-16W |
25000 |
ON全系列可订货 |
|||
MOSDDH |
23+ |
21500 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
SP |
23+ |
65480 |
|||||
NIC |
25+ |
200 |
公司优势库存 热卖中!! |
||||
ON |
24+ |
SOIC-16 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
ON(安森美) |
23+ |
标准封装 |
8000 |
正规渠道,只有原装! |
|||
24+ |
3000 |
公司存货 |
|||||
onsemi |
23+ |
SMD |
972 |
微芯专营原厂正品现货全系列 |
|||
ON(安森美) |
23+ |
标准封装 |
5000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
NCD57252规格书下载地址
NCD57252参数引脚图相关
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NCD57252数据表相关新闻
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DdatasheetPDF页码索引
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