位置：首页 > IC中文资料 > NAND01GR3B2CZA6E其他被动元件
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：631.49 Kbytes Page：64 Pages | STMICROELECTRONICS 意法半导体 |   | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX numonyx | | ||
1-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, single level cell NAND flash memory Features ■ NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities ■ Supply voltage: 1.8 V/3 V ■ Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words ■ Block size – x8 device: (128K + 4K spare) bytes – x16 | NUMONYX numonyx | | ||
1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory 文件：711.53 Kbytes Page：62 Pages | STMICROELECTRONICS 意法半导体 | | ||
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory 文件：1.34162 Mbytes Page：60 Pages | NUMONYX numonyx | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
micron(镁光) |
24+ |
标准封装 |
22048 |
全新原装正品/价格优惠/质量保障 |
|||
STM |
2016+ |
VFBGA63 |
16180 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
24+ |
QFN |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
ST |
1948+ |
BGA |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
ST/意法 |
2023+ |
BGA |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
ST |
25+23+ |
QFN |
29870 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
ST/意法 |
25+ |
VFBGA63 |
58788 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST |
24+ |
QFN |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
MICRON美光 |
24+ |
BGA |
13500 |
免费送样原盒原包现货一手渠道联系 |
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