包装：盒 描述：NDFEB DISC 6X4MM PK10 传感器，变送器 磁体 - 多用途

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N8020主控卡（N8000旧平台测控板卡使用）

N8020A为一款高性能主控卡，作为NXI设备内各功能板卡与PC机之间的数据交换桥梁。N8020A主控卡安装于N8000A（N8000C）主机框内，对外提供2000Mbps高速以太网通讯带宽，通讯接口采用标准RJ45接口，便于用户接线、操作、系统集成。 • 多达21通道以太网接口(5个千兆接口，16个百兆接口)，10/100/1000M自适应\n• 高吞吐速率，带宽高达2000Mbps\n• 通用以太网接口，可无限扩展通讯距离\n• LED动态指示灯，实时显示端口状态\n• 可应用于N8000测控主机\n• NXI槽位数：1，单卡匹配N8000S机盒使用\n\n\n;

INSULATION RESISTANCE: 100 MOHMS MIN @ 100VDC.

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DIELECTRIC STRENGTH: 500VAC MIN FOR 1 MINUTE.

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DIELECTRIC STRENGTH: 500VAC MIN FOR 1 MINUTE.

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DIELECTRIC STRENGTH: 500VAC MIN FOR 1 MINUTE.

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CONTACT RATINGS: 25mA @24VDC. (SWITCH)

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DIELECTRIC STRENGTH: 500VAC MIN FOR 1 MINUTE.

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All DIMENSION IN MM

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KAC02LGGR

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OPERATING FORCE: 800 GRAMS MAX.

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OPERATING FORCE: 800 GRAMS MAX.

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PACKAGE: TAPE AND REEL (700 PER REEL)

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Plastic High Power Silicon PNP Transistor

Plastic High Power Silicon PNP Transistor . . . designed for use up to 30 Watt audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • BD802 is complementary with BD 795, 797, 799, 801

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

High−Power NPN Silicon Transistor • • • for use as an output device in complementary audio amplifiers to 100−Watts music power per channel. Features • High DC Current Gain − hFE = 25−100 @ IC = 7.5 A • Excellent Safe Operating Area • Complement to the PNP MJ4502

POWER TRANSISTORS(30A,100V,200W)

30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat