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型号 功能描述 生产厂家 企业 LOGO 操作
MUR160S

ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER Voltage: 50 to 1000V Current: 1.0A

ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER Voltage: 50 to 1000V Current: 1.0A FEATURE Low power loss High surge capability Glass passivated chip junction Ultra-fast recovery time for high efficiency High temperature soldering guaranteed 250℃/10sec/0.375″lead length a

GULFSEMI

海湾电子

MUR160S

1.0 AMP. Surface Mount Ultrafast Power Rectifiers

FEATURES - Glass passivated chip junction - Ideal for automated placement - Ultrafast recovery time for high efficiency - Low forward voltage, low power loss - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC -

TSC

台湾半导体

MUR160S

1.0 AMP. Surface Mount Ultrafast Power Rectifiers

文件:261 Kbytes Page:4 Pages

TSC

台湾半导体

MUR160S

Surface Mount Ultrafast Power Rectifiers

文件:209.42 Kbytes Page:5 Pages

TSC

台湾半导体

MUR160S

1A, 50V - 600V Ultra Fast Surface Mount Rectifier

文件:435.04 Kbytes Page:7 Pages

TSC

台湾半导体

MUR160S

封装/外壳:DO-214AA,SMB 包装:卷带(TR) 描述:DIODE GEN PURP 600V 1A DO214AA 分立半导体产品 二极管 - 整流器 - 单

TSC

台湾半导体

MUR160S

超快恢复二极管

JIEJIE

捷捷微电

封装/外壳:DO-214AA,SMB 包装:卷带(TR) 描述:DIODE GEN PURP 600V 1A DO214AA 分立半导体产品 二极管 - 整流器 - 单

TSC

台湾半导体

Axial Lead Rectifiers

Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency invert

MOTOROLA

摩托罗拉

MOSFET BROADBAND RF POWER FET

The RF MOSFET Line Power Field Effect Transistor N–Channel Enhancement–Mode MOSFET Designed primarily for wideband large–signal output and driver from 30–500 MHz. • Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB Efficiency = 50 • Excellent Thermal

MOTOROLA

摩托罗拉

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NEC Type RD2.0E to RD200E Series are planar type zener diode in the popular DO-35 package with DHD (Double Heatsink Diode) construction having allowable power dissipation of 500 mW. To meet various application at customers, Vz (zener voltage) is classified into the tight tolerance und

NEC

瑞萨

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

MOTOROLA

摩托罗拉

POWER TRANSISTORS(10A,320-380V,125W)

MOSPEC

统懋

MUR160S产品属性

  • 类型

    描述

  • VRRM_Max (V):

    600

  • IF(AV)_Max (A):

    1

  • IFSM_Max @ tP = 8.3ms (A):

    30

  • IR_Max (μA):

    5

  • @ VDC (V):

    600

  • VF_Max (V):

    1.25

  • @ IF (A):

    1

  • CJ_Typ (pF):

    10

  • Trr_Max (ns):

    50

更新时间:2026-5-13 19:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TSC
11+
DO-214AA
30000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
TSC/台湾半导体
25+
DO-214AA
880000
明嘉莱只做原装正品现货
TSC
17+
DO-214A
60000
保证进口原装可开17%增值税发票
捷捷微
23+
SMA
16000
原厂授权一级代理,专业海外优势订货,价格优势、品种
TSC
23+
DO-214AA
12800
公司只有原装 欢迎来电咨询。
TAIWAN
24+
SMB
22055
郑重承诺只做原装进口现货
TAIWAN/台半
26+
SMB
43600
全新原装现货,假一赔十
JJW/捷捷微
24+
DO-214AA
50000
全新原装,一手货源,全场热卖!
JJW/捷捷微
25+
DO-214AA
50000
原盒原标,正品现货 诚信经营 价格美丽 假一罚十
Taiwan Semiconductor(台湾半导
25+
DO-214AA(SMB)
500000
源自原厂成本,高价回收工厂呆滞

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