Super Fast Recovery Diode, 100A

Features • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching

Silicon Super Fast Recovery Diode

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Silicon Super Fast Recovery Diode

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HIGH POWER- SUPER FAST RECTIFIERS

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HIGH POWER- SUPER FAST RECTIFIERS

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封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 400V 50A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列

Super Fast Recovery Rectifiers

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific

SLOTTED SWITCH

INFRARED LED+PHOTO IC APPLICATIONS ● TIMING DETECTION FOR PRINTERS, TYPEWRITERS AND FACSIMILE

100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts

Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency