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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MUR10040 | 100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency | MCC |   | |
MUR10040 | HIGH POWER- SUPER FAST RECTIFIERS 文件：412.5 Kbytes Page：2 Pages | AMERICASEMI | | |
100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency | MCC | | ||
Super Fast Recovery Diode, 100A Features • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching | NAINA | | ||
Super Fast Recovery Diode, 100A Features • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching | NAINA | | ||
Silicon Super Fast Recovery Diode 文件：380.66 Kbytes Page：3 Pages | GENESIC | | ||
HIGH POWER- SUPER FAST RECTIFIERS 文件：408.12 Kbytes Page：2 Pages | AMERICASEMI | | ||
Silicon Super Fast Recovery Diode 文件：692.84 Kbytes Page：3 Pages | GENESIC | | ||
HIGH POWER- SUPER FAST RECTIFIERS 文件：412.5 Kbytes Page：2 Pages | AMERICASEMI | | ||
封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 400V 50A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列 | GENESIC | | ||
High Power Super Fast Recovery Rectifiers - Twin Tower Modules | AMERICASEMI | | ||
整流模块 | ASEMI 强元芯电子 | | ||
Silicon Super Fast Recovery Diode 文件：692.84 Kbytes Page：3 Pages | GENESIC | | ||
HIGH POWER- SUPER FAST RECTIFIERS 文件：412.5 Kbytes Page：2 Pages | AMERICASEMI | | ||
封装/外壳：双塔架 包装：散装 描述：DIODE MODULE 400V 50A 2TOWER 分立半导体产品 二极管 - 整流器 - 阵列 | GENESIC | | ||
HIGH POWER- SUPER FAST RECTIFIERS 文件：408.12 Kbytes Page：2 Pages | AMERICASEMI | | ||
Silicon Super Fast Recovery Diode 文件：692.84 Kbytes Page：3 Pages | GENESIC | | ||
Silicon Super Fast Recovery Diode 文件：380.66 Kbytes Page：3 Pages | GENESIC | | ||
Super Fast Recovery Rectifiers | NAVITAS 纳微半导体 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Identical Specific | ADPOW | | ||
SLOTTED SWITCH INFRARED LED+PHOTO IC APPLICATIONS ● TIMING DETECTION FOR PRINTERS, TYPEWRITERS AND FACSIMILE | MARKTECH | | ||
100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts Features • High Surge Capability • Low Leakage • Low Forward Voltage Drop • High Current Capability • Supre Fast switching for high efficiency | MCC | |
MUR10040产品属性
- 类型
描述
- 型号
MUR10040
- 制造商
MCC
- 制造商全称
Micro Commercial Components
- 功能描述
100 Amp Supre Fast Recovery Rectifier 50 to 600 Volts
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor |
22+ |
Twin Tower |
9000 |
原厂渠道,现货配单 |
|||
MOTOROLA |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
MOTOROLA |
23+ |
模块 |
350 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
|||
JXND/嘉兴南电 |
22+ |
TO-3P |
20000 |
公司只有原装 品质保障 |
|||
MOT |
25+ |
3 |
公司优势库存 热卖中!! |
||||
GeneSiC |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
CJ/长电 |
24+ |
TO-3P |
50000 |
只做原装，欢迎询价，量大价优 |
|||
LX厂直销质高价平 |
23+ |
TO-247 |
16000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
MOTOROLA |
2018 |
模块 |
300 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
JXND/嘉兴南电 |
25+ |
TO-3P |
50000 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十 |
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MUR10040规格书下载地址
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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