isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: These N-Channel enhancement mode power field effect transistors are using trench DMOS techno

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 10mΩ ID 100A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Power MOSFET

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N-Channel MOSFET

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