isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 35A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 55mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

60V N-Channel Power Mosfet

Features VDS = 60V,ID =35A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Switching Low ON Resistance(Rdson≤29mΩ) Low Gate Charge Low Reverse transfer capacitances 100 Single Pulse avalanche energy Test

60V N-Channel Power Mosfet

General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 60V,ID =35A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Swit

60V N-Channel Trench MOSFET

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N-Channel MOSFET uses advanced trench technology

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N-Channel 60-V (D-S) MOSFET

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