General Description

These N-channel enhancement mode power mosfets used

advanced trench technology design, provided excellent Rdson

and low gate charge. Which accords with the RoHS standard.

Features

VDS = 60V,ID =35A

RDS(ON),23 mΩ(Typ) @ VGS =10V

RDS(ON),30 mΩ(Typ) @ VGS =4.5V

Fast Switching

Low ON Resistance(Rdson≤29mΩ)

Low Gate Charge

Low Reverse transfer capacitances

100 Single Pulse avalanche energy Test

Application

Power switch circuit of adaptor and charger;

LED backlight driver;

Synchronousrectification