TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM

TMOS E-FET Power Field Effect Transistors DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, p

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 6A@ TC=25℃ ·Drain Source Voltage : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @ VGS= 10V DESCRIPTION ·motor drive, ·DC-DC converter, ·power switch and solenoid drive.

N-Channel MOSFET 200V, 6.0A, 0.65Q

Features © Vos =200v + o= 60A + Rosin 50650 @Ves = 10V.

TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM

功率 MOSFET，200V，6A，700mΩ，单 N 沟道，DPAK

Power MOSFET 6 Amps, 200 Volts N?묬hannel DPAK

文件：90.4 Kbytes Page：9 Pages

Power MOSFET 6 Amps, 200 Volts N?묬hannel DPAK

文件：90.4 Kbytes Page：9 Pages

Power MOSFET 6 Amps, 200 Volts N−Channel DPAK

Power MOSFET 6 Amps, 200 Volts N?묬hannel DPAK

文件：90.4 Kbytes Page：9 Pages

Power MOSFET 6 Amps, 200 Volts N?묬hannel DPAK

文件：90.4 Kbytes Page：9 Pages

N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

N-channel Enhancement Mode Power MOSFET

Features  VDS= 200V, ID= 30 A RDS(ON)

N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti