位置：首页 > IC中文资料第4033页 > FDD6N20TF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FDD6N20TF | N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 |   | |
FDD6N20TF | N-channel Enhancement Mode Power MOSFET Features VDS= 200V, ID= 30 A RDS(ON) | BYCHIP 百域芯 | | |
FDD6N20TF | MOSFET N-CH 200V 4.5A D-PAK | ONSEMI 安森美半导体 | | |
N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
N-Channel MOSFET Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig | FAIRCHILD 仙童半导体 | | ||
TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 0.7 OHM TMOS E-FET Power Field Effect Transistors DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery | MOTOROLA 摩托罗拉 | |
FDD6N20TF产品属性
- 类型
描述
- 型号
FDD6N20TF
- 功能描述
MOSFET 200V N-CH MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FDD |
22+ |
SOT23-6 |
20000 |
公司只做原装 品质保障 |
|||
FAIRCHILD/仙童 |
25+ |
TO-252 |
30000 |
全新原装正品支持含税 |
|||
FAIRCHILD |
20+ |
TO-252(DPAK) |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD |
24+ |
TO-252(DPAK) |
8866 |
||||
Fairchild/ON |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
FSC |
24+ |
TO-252 |
5000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
FAIRCHIL |
2025+ |
TO-252-2 |
5425 |
全新原厂原装产品、公司现货销售 |
|||
23+ |
65480 |
||||||
onsemi(安森美) |
25+ |
TO-252(DPAK) |
18746 |
样件支持,可原厂排单订货! |
|||
FAIRCHILD/仙童 |
23+ |
SOT252 |
8000 |
只做原装现货 |
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FDD6N20TF规格书下载地址
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