TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design al

TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM

800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

1.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

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1A, 800V N-CHANNEL POWER MOSFET

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N-CHANNEL MOSFET in a TO-92 Plastic Package

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Rectifier Diode

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