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1N80价格

参考价格:¥1112.9664

型号:1N8024-GA 品牌:GeneSiC Semiconductor 备注:这里有1N80多少钱,2026年最近7天走势,今日出价,今日竞价,1N80批发/采购报价,1N80行情走势销售排行榜,1N80报价。
型号 功能描述 生产厂家 企业 LOGO 操作
1N80

1A, 800V N-CHANNEL POWER MOSFET

The UTC 1N80 is an N-channel mode power MOSFET usingUTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high energy pulse in the avalanche • RDS(on)=13.5Ω @VGS =10V \n• Improved dv/dt capability \n• 100% avalanche tested;

UTC

友顺

1N80

1.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件:163.67 Kbytes Page:6 Pages

UTC

友顺

1N80

1A, 800V N-CHANNEL POWER MOSFET

文件:182.22 Kbytes Page:6 Pages

UTC

友顺

2 A, 100 V, 15 ns Hyperfast Soft Recovery Rectifier

• Hyperfast Reverse Recovery Time 20 ns Max\n• Low Forward Voltage Drop\n• Low Reverse Leakage Current\n• Avalanche Breakdown\n• Void Free Ceramic Frit Glass Construction\n• High Temperature Category I Eutectic Metallurgical Bond\n• Hermetically Sealed\n• Solid Silver Lead\n• Excellent Liquid-to-Liq;

SSDI

2 A, 100 V, 15 ns Hyperfast Soft Recovery Rectifier

• Hyperfast Reverse Recovery Time 20 ns Max\n• Low Forward Voltage Drop\n• Low Reverse Leakage Current\n• Avalanche Breakdown\n• Void Free Ceramic Frit Glass Construction\n• High Temperature Category I Eutectic Metallurgical Bond\n• Hermetically Sealed\n• Solid Silver Lead\n• Excellent Liquid-to-Liq;

SSDI

1A, 800V N-CHANNEL POWER MOSFET

文件:182.22 Kbytes Page:6 Pages

UTC

友顺

HYPER FAST SOFT RECOVERY RECTIFIER

文件:187.96 Kbytes Page:2 Pages

SSDI

HYPER FAST SOFT RECOVERY RECTIFIER

文件:187.96 Kbytes Page:2 Pages

SSDI

HYPER FAST SOFT RECOVERY RECTIFIER

文件:187.96 Kbytes Page:2 Pages

SSDI

HYPER FAST SOFT RECOVERY RECTIFIER

文件:187.96 Kbytes Page:2 Pages

SSDI

HYPER FAST SOFT RECOVERY RECTIFIER

文件:187.96 Kbytes Page:2 Pages

SSDI

HYPER FAST SOFT RECOVERY RECTIFIER

文件:187.96 Kbytes Page:2 Pages

SSDI

HYPER FAST SOFT RECOVERY RECTIFIER

文件:187.96 Kbytes Page:2 Pages

SSDI

HYPER FAST SOFT RECOVERY RECTIFIER

文件:187.96 Kbytes Page:2 Pages

SSDI

HYPER FAST SOFT RECOVERY RECTIFIER

文件:187.96 Kbytes Page:2 Pages

SSDI

HYPER FAST SOFT RECOVERY RECTIFIER

文件:187.96 Kbytes Page:2 Pages

SSDI

HYPER FAST SOFT RECOVERY RECTIFIER

文件:187.96 Kbytes Page:2 Pages

SSDI

HYPER FAST SOFT RECOVERY RECTIFIER

文件:187.96 Kbytes Page:2 Pages

SSDI

HYPER FAST RECOVERY RECTIFIER

文件:187.9 Kbytes Page:2 Pages

SSDI

HYPER FAST RECOVERY RECTIFIER

文件:187.9 Kbytes Page:2 Pages

SSDI

HYPER FAST RECOVERY RECTIFIER

文件:187.9 Kbytes Page:2 Pages

SSDI

HYPER FAST RECOVERY RECTIFIER

文件:187.9 Kbytes Page:2 Pages

SSDI

HYPER FAST RECOVERY RECTIFIER

文件:187.9 Kbytes Page:2 Pages

SSDI

HYPER FAST RECOVERY RECTIFIER

文件:187.9 Kbytes Page:2 Pages

SSDI

HYPER FAST RECOVERY RECTIFIER

文件:187.9 Kbytes Page:2 Pages

SSDI

HYPER FAST RECOVERY RECTIFIER

文件:187.9 Kbytes Page:2 Pages

SSDI

HYPER FAST RECOVERY RECTIFIER

文件:187.9 Kbytes Page:2 Pages

SSDI

HYPER FAST RECOVERY RECTIFIER

文件:187.9 Kbytes Page:2 Pages

SSDI

HYPER FAST RECOVERY RECTIFIER

文件:187.9 Kbytes Page:2 Pages

SSDI

HYPER FAST RECOVERY RECTIFIER

文件:187.9 Kbytes Page:2 Pages

SSDI

Power Schottky Diode

文件:782.66 Kbytes Page:5 Pages

GENESIC

封装/外壳:TO-257-3 包装:散装 描述:DIODE SILICON 1.2KV 8A TO257 分立半导体产品 二极管 - 整流器 - 单

GENESIC

Power Schottky Diode

文件:768.86 Kbytes Page:5 Pages

GENESIC

封装/外壳:TO-257-3 包装:散装 描述:DIODE SCHOTTKY 1.2KV 9.4A TO257 分立半导体产品 二极管 - 整流器 - 单

GENESIC

Power Schottky Diode

文件:796.15 Kbytes Page:5 Pages

GENESIC

Power Schottky Diode

文件:776.74 Kbytes Page:5 Pages

GENESIC

Power Schottky Diode

文件:676.25 Kbytes Page:5 Pages

GENESIC

Power Schottky Diode

文件:777.23 Kbytes Page:5 Pages

GENESIC

Power Schottky Diode

文件:722.8 Kbytes Page:5 Pages

GENESIC

Power Schottky Diode

文件:801.42 Kbytes Page:5 Pages

GENESIC

High Temperature Silicon Carbide Power Schottky Diode

文件:671.69 Kbytes Page:5 Pages

GENESIC

400 mW low voltage avalanche low noise silicon zener diodes

文件:94.49 Kbytes Page:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

1.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件:163.67 Kbytes Page:6 Pages

UTC

友顺

1A, 800V N-CHANNEL POWER MOSFET

文件:182.22 Kbytes Page:6 Pages

UTC

友顺

1A, 800V N-CHANNEL POWER MOSFET

文件:182.22 Kbytes Page:6 Pages

UTC

友顺

1.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件:163.67 Kbytes Page:6 Pages

UTC

友顺

1.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件:163.67 Kbytes Page:6 Pages

UTC

友顺

1A, 800V N-CHANNEL POWER MOSFET

文件:182.22 Kbytes Page:6 Pages

UTC

友顺

1A, 800V N-CHANNEL POWER MOSFET

文件:182.22 Kbytes Page:6 Pages

UTC

友顺

1.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件:163.67 Kbytes Page:6 Pages

UTC

友顺

1.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件:163.67 Kbytes Page:6 Pages

UTC

友顺

1A, 800V N-CHANNEL POWER MOSFET

文件:182.22 Kbytes Page:6 Pages

UTC

友顺

Power MOSFET

文件:2.17748 Mbytes Page:9 Pages

VBSEMI

微碧半导体

Power MOSFET

文件:1.2924 Mbytes Page:9 Pages

VBSEMI

微碧半导体

1.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件:163.67 Kbytes Page:6 Pages

UTC

友顺

1A, 800V N-CHANNEL POWER MOSFET

文件:182.22 Kbytes Page:6 Pages

UTC

友顺

TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design al

MOTOROLA

摩托罗拉

TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS

TMOS E-FET Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand hi

MOTOROLA

摩托罗拉

800V N-Channel Enhancement Mode MOSFET

FEATURES • 1A, 800V, RDS(ON)=16Ω@VGS=10V, ID=0.5A • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives

PANJIT

強茂

High Voltage MOSFET

文件:60.97 Kbytes Page:2 Pages

IXYS

艾赛斯

1N80产品属性

  • 类型

    描述

  • Vdss(V):

    800

  • Vgss(V):

    30

  • Id(A):

    1

  • Package:

    TO-220/TO-220F/TO-22...

更新时间:2026-5-24 22:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
长电
25+23+
TO-220-3L
24518
绝对原装正品全新进口深圳现货
N/A
24+
TO-252
328
华晶微
25+
TO-251
8000
只有原装
台产
13+
TO-251
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
UTC/友顺
2022+
TO-252
32500
原厂代理 终端免费提供样品
华晶微
23+
TO-251
50000
全新原装正品现货,支持订货
UTC/友顺
23+
TO-252
79999
原厂授权代理,海外优势订货渠道。可提供大量库存,详
TOSHIBA
12+
TO-252
15000
全新原装,绝对正品,公司现货供应。
华晶微
23+
TO-251
50000
全新原装正品现货,支持订货
GeneSiC
25+
电联咨询
7800
公司现货,提供拆样技术支持

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