800V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

N-Channel QFET MOSFET 800 V, 1.0 A, 20

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=1A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 20Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，QFET®，800 V，1.0 A，20 Ω，DPAK

N-Channel QFET짰 MOSFET 800 V, 1.0 A, 20 廓

文件：1.27683 Mbytes Page：9 Pages

N-Channel QFET MOSFET 800 V, 1.0 A, 20

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

800V N-Channel MOSFET

文件：737.3 Kbytes Page：9 Pages

N-Channel QFET짰 MOSFET 800 V, 1.0 A, 20 廓

文件：1.27683 Mbytes Page：9 Pages

1.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

文件：163.67 Kbytes Page：6 Pages

1A, 800V N-CHANNEL POWER MOSFET

文件：182.22 Kbytes Page：6 Pages

N-CHANNEL MOSFET in a TO-92 Plastic Package

文件：991.35 Kbytes Page：6 Pages

Rectifier Diode

文件：140.44 Kbytes Page：4 Pages