包装：散装 描述：RH SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Rad Hard NPN Silicon High Speed Switching Transistor

DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

Rad Hard NPN Silicon High Speed Switching Transistor

DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

包装：卷带（TR） 描述：RH DUAL - SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 阵列

Switching Transistors

Switching Transistors NPN Silicon

NPN switching transistor

DESCRIPTION NPN switching transistor in a TO-18 metal package. FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching • VHF amplification.

HIGH-FREQUENCY SATURATED SWITCH

DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistorin JedecTO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA.

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.

Bipolar NPN Device in a Hermetically sealed TO18 Metal Package.

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