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2N2369晶体管资料

  • 2N2369(A)别名:2N2369(A)三极管、2N2369(A)晶体管、2N2369(A)晶体三极管

  • 2N2369(A)生产厂家:DIT_德国椤茨标准电器公司_美国摩托罗拉半导体公司

  • 2N2369(A)制作材料:Si-NPN

  • 2N2369(A)性质:高速开关 (SS)

  • 2N2369(A)封装形式:直插封装

  • 2N2369(A)极限工作电压:40V

  • 2N2369(A)最大电流允许值:0.2A

  • 2N2369(A)最大工作频率:<1MHZ或未知

  • 2N2369(A)引脚数:3

  • 2N2369(A)最大耗散功率:0.36W

  • 2N2369(A)放大倍数:β>40

  • 2N2369(A)图片代号:D-8

  • 2N2369(A)vtest:40

  • 2N2369(A)htest:999900

  • 2N2369(A)atest:0.2

  • 2N2369(A)wtest:0.36

  • 2N2369(A)代换 2N2369(A)用什么型号代替:BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,BSX87,BSX88,BSX92,BSX93,BSY62,BSY63,2N3227,2N3261,2SC2901,3DG84B,

2N2369价格

参考价格:¥2.6873

型号:2N2369A 品牌:SPC 备注:这里有2N2369多少钱,2026年最近7天走势,今日出价,今日竞价,2N2369批发/采购报价,2N2369行情走势销售排行榜,2N2369报价。
型号 功能描述 生产厂家 企业 LOGO 操作
2N2369

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.

CDIL

2N2369

Switching Transistors

Switching Transistors NPN Silicon

MOTOROLA

摩托罗拉

2N2369

NPN switching transistor

DESCRIPTION NPN switching transistor in a TO-18 metal package. FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching • VHF amplification.

PHILIPS

飞利浦

2N2369

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.

BOCA

博卡

2N2369

20 STERN AVE

SWITCHING TRANSISTORS NPN SILICON

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N2369

HIGH-FREQUENCY SATURATED SWITCH

DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistorin JedecTO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA.

STMICROELECTRONICS

意法半导体

2N2369

Bipolar NPN Device in a Hermetically sealed TO18 Metal Package.

文件:14.59 Kbytes Page:1 Pages

SEME-LAB

2N2369

封装/外壳:TO-206AA,TO-18-3 金属罐 包装:托盘 描述:SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极(BJT)- 射频

MICROCHIP

微芯科技

2N2369

封装/外壳:TO-206AA,TO-18-3 金属罐 包装:管件 描述:TRANS NPN 15V 0.2A TO18 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

2N2369

NPN MED PWR HS TRANSISTOR

ONSEMI

安森美半导体

20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A

SWITCHING TRANSISTORS NPN SILICON

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

20 STERN AVE

SWITCHING TRANSISTORS NPN SILICON

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

HIGH-SPEED SATURATED SWITCH

DESCRIPTION The 2N2369A is a silicon planar epitaxial NPN transistorin JedecTO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA.

STMICROELECTRONICS

意法半导体

NPN SWITCHING TRANSISTOR

FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC TO18 PACKAGE • CECC SCREENING OPTIONS

TTELEC

NPN Switching 15V to 20V, 0.1A

This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two le

MICROCHIP

微芯科技

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.

BOCA

博卡

Chip Type 2C2369A Geometry 0005 Polarity NPN

Chip type 2C2369A by Semicoa Semiconductors provides performance similar to these devices. Features: • High speed switching capabilities APPLICATIONS: Designed for high speed switching applications.

SEMICOA

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.

CDIL

Small Signal Transistors

Small Signal Transistors TO-18 Case (Continued)

CENTRAL

NPN SILICON TRANSISTOR

Small Signal Transistors TO-18 Case (Continued)

CENTRAL

NPN SILICON TRANSISTOR

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317

MICROSEMI

美高森美

NPN BIPOLAR TRANSISTOR

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317

MICROSEMI

美高森美

NPN BIPOLAR TRANSISTOR

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317

MICROSEMI

美高森美

TECHNICAL DATA SHEET

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317

MICROSEMI

美高森美

HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS

FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS APPLICATIONS: Hermetically sealed surface mount version of the popular 2N2369A for high reliability / space applications requiring small size and low wei

SEME-LAB

TECHNICAL DATA SHEET

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317

MICROSEMI

美高森美

NPN SILICON TRANSISTOR

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317

MICROSEMI

美高森美

NPN SILICON TRANSISTOR

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317

MICROSEMI

美高森美

TECHNICAL DATA SHEET

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317

MICROSEMI

美高森美

TECHNICAL DATA SHEET

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317

MICROSEMI

美高森美

NPN SILICON TRANSISTOR

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317

MICROSEMI

美高森美

Silicon NPN Transistor

Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2369AUBJ) • JANTX level (2N2369AUBJX) • JANTXV level (2N2369AUBJV) • JANS level (2N2369AUBJS) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2

SEMICOA

NPN SILICON TRANSISTOR

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317

MICROSEMI

美高森美

TECHNICAL DATA SHEET

NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317

MICROSEMI

美高森美

NPN SILICON SWITCHING TRANSISTOR

文件:66.37 Kbytes Page:2 Pages

MICROSEMI

美高森美

NPN SILICON TRANSISTOR

文件:54.17 Kbytes Page:2 Pages

MICROSEMI

美高森美

Silicon NPN Transistor

文件:213.11 Kbytes Page:2 Pages

SEMICOA

HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS

文件:31.96 Kbytes Page:2 Pages

SEME-LAB

Silicon NPN Transistor

文件:213.11 Kbytes Page:2 Pages

SEMICOA

HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS

文件:31.96 Kbytes Page:2 Pages

SEME-LAB

NPN SILICON TRANSISTOR

文件:54.17 Kbytes Page:2 Pages

MICROSEMI

美高森美

SILICON NPN TRANSISTOR

文件:541.83 Kbytes Page:2 Pages

CENTRAL

HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS

文件:22.41 Kbytes Page:2 Pages

SEME-LAB

HIGH SPEED / MEDIUM POWER / NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS

TTELEC

HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS

文件:21.41 Kbytes Page:2 Pages

SEME-LAB

HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS

文件:21.41 Kbytes Page:2 Pages

SEME-LAB

DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE

文件:21.27 Kbytes Page:2 Pages

SEME-LAB

DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE

文件:17.83 Kbytes Page:2 Pages

SEME-LAB

DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE

文件:21.27 Kbytes Page:2 Pages

SEME-LAB

NPN SILICON TRANSISTOR

文件:54.17 Kbytes Page:2 Pages

MICROSEMI

美高森美

NPN SILICON SWITCHING TRANSISTOR

文件:66.37 Kbytes Page:2 Pages

MICROSEMI

美高森美

NPN SILICON SWITCHING TRANSISTOR

文件:66.37 Kbytes Page:2 Pages

MICROSEMI

美高森美

NPN SILICON TRANSISTOR

文件:54.17 Kbytes Page:2 Pages

MICROSEMI

美高森美

NPN SILICON TRANSISTOR

文件:54.17 Kbytes Page:2 Pages

MICROSEMI

美高森美

NPN SILICON SWITCHING TRANSISTOR

文件:66.37 Kbytes Page:2 Pages

MICROSEMI

美高森美

NPN SILICON TRANSISTOR

文件:54.17 Kbytes Page:2 Pages

MICROSEMI

美高森美

2N2369产品属性

  • 类型

    描述

  • Maximum Power Dissipation:

    500mW

  • Maximum Operating Temperature:

    200°C

  • Maximum Emitter Base Voltage:

    4.5V

  • Maximum Collector Emitter Voltage:

    15V

  • Maximum Collector Emitter Saturation Voltage:

    0.2@1mA@10mA

  • Maximum Collector Base Voltage:

    40V

  • Material:

    Si

  • Configuration:

    Single

  • Category:

    Bipolar Power

更新时间:2026-5-19 12:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+24
TO-18
29850
原装原盘原标.保证每一片都来自原厂
MOT
21+
CAN3
9828
绝对公司现货,不止网上数量!原装正品,假一赔十!
FAIRCHILD
26+
TO-263
86720
全新原装正品价格最实惠 假一赔百
ST
25+
CAN3Pin
3629
原装优势!房间现货!欢迎来电!
SEMELAB
23+
LCC2
5000
公司只做原装,可配单
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
MICROSEMI/美高森美
22+
SMD3
12245
现货,原厂原装假一罚十!
MICROELECTRONICS
24+
NA
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
ST
25+
CAN3
18000
全新原装现货,假一赔十
ST/意法
25+
CAN3
32360
ST/意法全新特价2N2369A即刻询购立享优惠#长期有货

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