2N2369晶体管资料
2N2369(A)别名：2N2369(A)三极管、2N2369(A)晶体管、2N2369(A)晶体三极管
2N2369(A)生产厂家：DIT_德国椤茨标准电器公司_美国摩托罗拉半导体公司
2N2369(A)制作材料：Si-NPN
2N2369(A)性质：高速开关 （SS）
2N2369(A)封装形式：直插封装
2N2369(A)极限工作电压：40V
2N2369(A)最大电流允许值：0.2A
2N2369(A)最大工作频率：<1MHZ或未知
2N2369(A)引脚数：3
2N2369(A)最大耗散功率：0.36W
2N2369(A)放大倍数：β>40
2N2369(A)图片代号：D-8
2N2369(A)vtest：40
2N2369(A)htest：999900
- 2N2369(A)atest：0.2
2N2369(A)wtest：0.36
2N2369(A)代换 2N2369(A)用什么型号代替：BSS10,BSS11,BSS12,BSV59,BSX19,BSX20,BSX39,BSX87,BSX88,BSX92,BSX93,BSY62,BSY63,2N3227,2N3261,2SC2901,3DG84B,
2N2369价格
参考价格：￥2.6873
型号：2N2369A 品牌：SPC 备注：这里有2N2369多少钱，2026年最近7天走势，今日出价，今日竞价，2N2369批发/采购报价，2N2369行情走势销售排行榜，2N2369报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
2N2369 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications. | CDIL |   | |
2N2369 | Switching Transistors Switching Transistors NPN Silicon | MOTOROLA 摩托罗拉 | | |
2N2369 | NPN switching transistor DESCRIPTION NPN switching transistor in a TO-18 metal package. FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching • VHF amplification. | PHILIPS 飞利浦 | | |
2N2369 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications. | BOCA 博卡 | | |
2N2369 | 20 STERN AVE SWITCHING TRANSISTORS NPN SILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
2N2369 | HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistorin JedecTO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. | STMICROELECTRONICS 意法半导体 | | |
2N2369 | Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 文件：14.59 Kbytes Page：1 Pages | SEME-LAB | | |
2N2369 | 封装/外壳：TO-206AA，TO-18-3 金属罐 包装：托盘 描述：SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极（BJT）- 射频 | MICROCHIP 微芯科技 | | |
2N2369 | 封装/外壳：TO-206AA，TO-18-3 金属罐 包装：管件 描述：TRANS NPN 15V 0.2A TO18 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
2N2369 | NPN MED PWR HS TRANSISTOR | ONSEMI 安森美半导体 | | |
20 STERN AVE SPRINGFIELD,NEW JERSEY 07081 U.S.A SWITCHING TRANSISTORS NPN SILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
20 STERN AVE SWITCHING TRANSISTORS NPN SILICON | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
HIGH-SPEED SATURATED SWITCH DESCRIPTION The 2N2369A is a silicon planar epitaxial NPN transistorin JedecTO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA. | STMICROELECTRONICS 意法半导体 | | ||
NPN SWITCHING TRANSISTOR FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC TO18 PACKAGE • CECC SCREENING OPTIONS | TTELEC | | ||
NPN Switching 15V to 20V, 0.1A This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two le | MICROCHIP 微芯科技 | | ||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications. | BOCA 博卡 | | ||
Chip Type 2C2369A Geometry 0005 Polarity NPN Chip type 2C2369A by Semicoa Semiconductors provides performance similar to these devices. Features: • High speed switching capabilities APPLICATIONS: Designed for high speed switching applications. | SEMICOA | | ||
NPN SILICON PLANAR EPITAXIAL TRANSISTORS APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications. | CDIL | | ||
Small Signal Transistors Small Signal Transistors TO-18 Case (Continued) | CENTRAL | | ||
NPN SILICON TRANSISTOR Small Signal Transistors TO-18 Case (Continued) | CENTRAL | | ||
NPN SILICON TRANSISTOR NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 | MICROSEMI 美高森美 | | ||
NPN BIPOLAR TRANSISTOR NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 | MICROSEMI 美高森美 | | ||
NPN BIPOLAR TRANSISTOR NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 | MICROSEMI 美高森美 | | ||
TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 | MICROSEMI 美高森美 | | ||
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS APPLICATIONS: Hermetically sealed surface mount version of the popular 2N2369A for high reliability / space applications requiring small size and low wei | SEME-LAB | | ||
TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 | MICROSEMI 美高森美 | | ||
NPN SILICON TRANSISTOR NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 | MICROSEMI 美高森美 | | ||
NPN SILICON TRANSISTOR NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 | MICROSEMI 美高森美 | | ||
TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 | MICROSEMI 美高森美 | | ||
TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 | MICROSEMI 美高森美 | | ||
NPN SILICON TRANSISTOR NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 | MICROSEMI 美高森美 | | ||
Silicon NPN Transistor Description Semicoa Semiconductors offers: • Screening and processing per MIL-PRF-19500 Appendix E • JAN level (2N2369AUBJ) • JANTX level (2N2369AUBJX) • JANTXV level (2N2369AUBJV) • JANS level (2N2369AUBJS) • QCI to the applicable level • 100 die visual inspection per MIL-STD-750 method 2 | SEMICOA | | ||
NPN SILICON TRANSISTOR NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 | MICROSEMI 美高森美 | | ||
TECHNICAL DATA SHEET NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/317 | MICROSEMI 美高森美 | | ||
NPN SILICON SWITCHING TRANSISTOR 文件：66.37 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
NPN SILICON TRANSISTOR 文件：54.17 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
Silicon NPN Transistor 文件：213.11 Kbytes Page：2 Pages | SEMICOA | | ||
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS 文件：31.96 Kbytes Page：2 Pages | SEME-LAB | | ||
Silicon NPN Transistor 文件：213.11 Kbytes Page：2 Pages | SEMICOA | | ||
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS 文件：31.96 Kbytes Page：2 Pages | SEME-LAB | | ||
NPN SILICON TRANSISTOR 文件：54.17 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
SILICON NPN TRANSISTOR 文件：541.83 Kbytes Page：2 Pages | CENTRAL | | ||
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS 文件：22.41 Kbytes Page：2 Pages | SEME-LAB | | ||
HIGH SPEED / MEDIUM POWER / NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS | TTELEC | | ||
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS 文件：21.41 Kbytes Page：2 Pages | SEME-LAB | | ||
HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE FOR HIGH RELIABILITY APPLICATIONS 文件：21.41 Kbytes Page：2 Pages | SEME-LAB | | ||
DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE 文件：21.27 Kbytes Page：2 Pages | SEME-LAB | | ||
DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE 文件：17.83 Kbytes Page：2 Pages | SEME-LAB | | ||
DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE 文件：21.27 Kbytes Page：2 Pages | SEME-LAB | | ||
NPN SILICON TRANSISTOR 文件：54.17 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
NPN SILICON SWITCHING TRANSISTOR 文件：66.37 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
NPN SILICON SWITCHING TRANSISTOR 文件：66.37 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
NPN SILICON TRANSISTOR 文件：54.17 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
NPN SILICON TRANSISTOR 文件：54.17 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
NPN SILICON SWITCHING TRANSISTOR 文件：66.37 Kbytes Page：2 Pages | MICROSEMI 美高森美 | | ||
NPN SILICON TRANSISTOR 文件：54.17 Kbytes Page：2 Pages | MICROSEMI 美高森美 | |
2N2369产品属性
- 类型
描述
- Maximum Power Dissipation：
500mW
- Maximum Operating Temperature：
200°C
- Maximum Emitter Base Voltage：
4.5V
- Maximum Collector Emitter Voltage：
15V
- Maximum Collector Emitter Saturation Voltage：
0.2@1mA@10mA
- Maximum Collector Base Voltage：
40V
- Material：
Si
- Configuration：
Single
- Category：
Bipolar Power
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOT |
25+23+ |
CAN3 |
23806 |
绝对原装正品全新进口深圳现货 |
|||
ST |
25+ |
CAN3Pin |
3629 |
原装优势!房间现货!欢迎来电! |
|||
ST/意法 |
22+ |
TO-18 |
8000 |
原装正品支持实单 |
|||
原厂 |
2540+ |
CAN3 |
6852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
CAL |
24+ |
TO-18 |
1900 |
||||
ST |
25+ |
CAN3 |
18000 |
全新原装现货,假一赔十 |
|||
SCA |
25+ |
365 |
公司优势库存 热卖中!!! |
||||
MOT |
320 |
正品原装--自家现货-实单可谈 |
|||||
MICROSEMI/美高森美 |
22+ |
SMD3 |
12245 |
现货,原厂原装假一罚十! |
|||
PH |
24+ |
CAN |
200 |
进口原装正品优势供应 |
2N2369规格书下载地址
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2N2369数据表相关新闻
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2019-4-16
DdatasheetPDF页码索引
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