Rad Hard NPN Silicon High Speed Switching Transistor

DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

封装/外壳：3-SMD，无引线 包装：散装 描述：RH SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Rad Hard NPN Silicon High Speed Switching Transistor

DESCRIPTION This RHA level NPN switching transistor 2N2369A device in a UB and UBC package is ideal to drive many high-reliability applications. This device is constructed and screened to a JANSR performance level with radiation test method 1019 wafer lot acceptance conducted on all die lots.

封装/外壳：3-SMD，无引线 包装：散装 描述：RH SMALL-SIGNAL BJT 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Switching Transistors

Switching Transistors NPN Silicon

NPN switching transistor

DESCRIPTION NPN switching transistor in a TO-18 metal package. FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching • VHF amplification.

HIGH-FREQUENCY SATURATED SWITCH

DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN transistorin JedecTO-18 metal case. It is designed specifically for high-speed saturated switching applications at current levels from 100 µA to 100 mA.

NPN SILICON PLANAR EPITAXIAL TRANSISTORS

APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.

Bipolar NPN Device in a Hermetically sealed TO18 Metal Package.

文件：14.59 Kbytes Page：1 Pages