RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions. Features · 30 MHz · 28 VOLTS · IMD = -30 dB · GOLD METALLIZATION

高温加速度计

新型 MS1000T 是同类中最好的 MEMS 加速度计，专为高温定向钻井应用而设计。\n该加速度计受益于 MS1000 和 TS1000T 系列，使其成为专为高温和钻孔市场制造的最佳 MEMS 产品。 • 高温范围：-40° 至 +175°C\n• 耐高重复性冲击：1'000g（500 次）\n• 低振动校正误差：<170μg/g2（±30g，典型值）;

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications. Diffused emitter resistors provide infinite VSWR capability under rated operating conditions. Features · 30 MHz · 12.5 VOLTS · IMD = -32 dBc · INFINITE VSWR CAPABILITY @

10 AMP SCHOTTKY BARRIER RECTIFIERS

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested

10 AMP SCHOTTKY BARRIER RECTIFIERS

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifer ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested)

10 AMP SCHOTTKY BARRIER RECTIFIERS

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifer ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested)

Schottky Barrier Rectifier

FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Low Power Loss/High Efficiency ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molde

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 50 to 60 Volts ● Reverse energy tested

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 50 to 60 Volts ● Reverse energy tested

RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • Optimized for SSB • 30 MHz • 50 Volts • Common Emitter • Gold Met

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. Features • 30 MHz • 50 VOLTS • POUT = 150 WATTS • GP = 14 dB MINIMUM •

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1008 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. Features • 30 MHz • 50 VOLTS • IMD = –30 dB • POUT = 150 WATTS • GP =

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring for reverse protection ● Low power loss, high efficiency ● High surge capacity ● VRRM 80 to 90 Volts

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring for reverse protection ● Low power loss, high efficiency ● High surge capacity ● VRRM 80 to 90 Volts

Schottky Barrier Rectifier

FEATURES ·Guardring for overvoltage protection ·Low power loss, high efficiency ·Low forward voltage drop ·High forward surge capability APPLICATIONS ·Freewheeling diodes ·DC/DCconverters ·Polarity protection application

超声波测量模拟前端，内部集成低噪声放大器，可编程增益放大器，温度传感器

RF/Microwave Si BJT Power Devices & Pallets

封装/外壳：M111 包装：托盘 描述：RF TRANS NPN 18V 175MHZ M111 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

文件：97.3 Kbytes Page：3 Pages

Control IC

文件：1.2316 Mbytes Page：41 Pages

封装/外壳：M177 包装：托盘 描述：RF TRANS NPN 55V 30MHZ M177 分立半导体产品 晶体管 - 双极（BJT）- 射频

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGH SPEED SWITCHING USE INSULATED TYPE • IDC DC current 100A • VRRM Repetitive peak reverse voltage 600/800/1000/1200V • trr Reverse recovery time 0.8µs • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICA

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGH SPEED SWITCHING USE INSULATED TYPE • IDC DC current 100A • VRRM Repetitive peak reverse voltage 600/800/1000/1200V • trr Reverse recovery time 0.8µs • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICA

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current 100A • VRRM Repetitive peak reverse voltage 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor con

HIGH POWER GENERAL USE INSULATED TYPE

HIGH POWER GENERAL USE INSULATED TYPE • IF(AV) Average forward current 100A • VRRM Repetitive peak reverse voltage 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor con

MEDIUM POWER GENERAL USE NON-INSULATED TYPE

MEDIUM POWER GENERAL USE NON-INSULATED TYPE •IT (AV) Average on-state current 100A •VRRM Repetitive peak reverse voltage 400V •VDRM Repetitive peak off-state voltage 400V •TRIPLE ARMS •Non-Insulated Type APPLICATION Welders