RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1000 is a 28V Class A silicon NPN planar transistor designed primarily for SSB communications. Diffused emitter ballast provide infinite VSWR capability under rated operating conditions. Features · 30 MHz · 28 VOLTS · IMD = -30 dB · GOLD METALLIZATION

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1001 is a 12.5V Class C silicon NPN transistor designed primarily for HF communications. Diffused emitter resistors provide infinite VSWR capability under rated operating conditions. Features · 30 MHz · 12.5 VOLTS · IMD = -32 dBc · INFINITE VSWR CAPABILITY @

10 AMP SCHOTTKY BARRIER RECTIFIERS

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested

10 AMP SCHOTTKY BARRIER RECTIFIERS

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifer ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested)

10 AMP SCHOTTKY BARRIER RECTIFIERS

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifer ● Guard ring protection ● Low power loss, high efficiency ● VRRM 30 to 40 Volts ● Reverse energy tested)

Schottky Barrier Rectifier

FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Low Power Loss/High Efficiency ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molde

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 50 to 60 Volts ● Reverse energy tested

RF AND MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1006 is a 50 V Class AB epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. Features • Optimized for SSB • 30 MHz • 50 Volts • Common Emitter • Gold Met

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring protection ● Low power loss, high efficiency ● VRRM 50 to 60 Volts ● Reverse energy tested

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. Features • 30 MHz • 50 VOLTS • POUT = 150 WATTS • GP = 14 dB MINIMUM •

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring for reverse protection ● Low power loss, high efficiency ● High surge capacity ● VRRM 80 to 90 Volts

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION: The MS1008 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. Features • 30 MHz • 50 VOLTS • IMD = –30 dB • POUT = 150 WATTS • GP =

10 AMP SCHOTTKY BARRIER RECTIFIER

10 Amp Schottky Barrier Rectifiers ● Schottky barrier rectifier ● Guard ring for reverse protection ● Low power loss, high efficiency ● High surge capacity ● VRRM 80 to 90 Volts

Schottky Barrier Rectifier

FEATURES ·Guardring for overvoltage protection ·Low power loss, high efficiency ·Low forward voltage drop ·High forward surge capability APPLICATIONS ·Freewheeling diodes ·DC/DCconverters ·Polarity protection application

高温加速度计

超声波测量模拟前端，内部集成低噪声放大器，可编程增益放大器，温度传感器

RF/Microwave Si BJT Power Devices & Pallets

封装/外壳：M111 包装：托盘 描述：RF TRANS NPN 18V 175MHZ M111 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

文件：97.3 Kbytes Page：3 Pages

Control IC

文件：1.2316 Mbytes Page：41 Pages

封装/外壳：M177 包装：托盘 描述：RF TRANS NPN 55V 30MHZ M177 分立半导体产品 晶体管 - 双极（BJT）- 射频

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

1.3 Watts Axial Leaded Zener Diodes

VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current

TOGGLE SWITCHES - MINIATURE

文件：1.55809 Mbytes Page：10 Pages

100/200

文件：3.83844 Mbytes Page：2 Pages