RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET

RF Power Field Effect Transistor Array N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications

RF Power Field Effect Transistor Array

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common

RF POWER FIELD EFFECT TRANSISTOR ARRAY

The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor Array N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common

封装/外壳：16-SOP（0.276"，7.00mm 宽） 包装：卷带（TR） 描述：RF MOSFET LDMOS 26V 16PFP 分立半导体产品 晶体管 - FET，MOSFET - 射频

1000 MHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET

RF POWER FIELD EFFECT TRANSISTOR ARRAY

NAND GATES/HEX INVERTERS

DESCRIPTION - The 8002, 9003, 9004, 9007, and 9012 are active LOW level output AND gates commonly know as NAND gates. The 9016 and 9017 are hex inverters with input and output characteristics identical to a NAND gate.

Molded SIP Reed Relays

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