型号 功能描述 生产厂家&企业 LOGO 操作

Suitable for TDMA, CDMA and multicarrier amplifier applications.

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts, IDQ =

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

Suitable for TDMA, CDMA and multicarrier amplifier applications.

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts, IDQ =

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD

Motorola

摩托罗拉

N-Channel Enhancement-Mode Lateral MOSFETs

The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD

Motorola

摩托罗拉

RF Power Field Effect Transistors

文件:433.62 Kbytes Page:12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power Field Effect Transistors

文件:433.62 Kbytes Page:12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

封装/外壳:SOT-957A 包装:卷带(TR) 描述:FET RF 65V 1.99GHZ NI-880 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

RF Power Field Effect Transistors

文件:433.62 Kbytes Page:12 Pages

freescaleFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

封装/外壳:NI-880S 包装:卷带(TR) 描述:FET RF 65V 1.99GHZ NI-880S 分立半导体产品 晶体管 - FET,MOSFET - 射频

ETC

知名厂家

MRF5S19130产品属性

  • 类型

    描述

  • 型号

    MRF5S19130

  • 功能描述

    射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H

  • RoHS

  • 制造商

    Freescale Semiconductor

  • 配置

    Single

  • 频率

    1800 MHz to 2000 MHz

  • 增益

    27 dB

  • 输出功率

    100 W

  • 封装/箱体

    NI-780-4

  • 封装

    Tray

更新时间:2025-8-12 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FREESCALE
24+
NA/
122
优势代理渠道,原装正品,可全系列订货开增值税票
FREESCALE
24+
SMD
880000
明嘉莱只做原装正品现货
MOTOROLA
23+
NA
8021
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
FREESCAL
12+
250
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Freescale
23+
高频管
750
专营高频管模块,全新原装!
原厂
2023+
模块
600
专营模块,继电器,公司原装现货
Freescale
NA
5500
一级代理 原装正品假一罚十价格优势长期供货
FREESCALE
24+
SMD
1680
FREESCALE专营品牌进口原装现货假一赔十
FREESCAL
23+
2750
原厂原装正品
MOT
24+
2789
全新原装自家现货!价格优势!

MRF5S19130数据表相关新闻