位置：首页 > IC中文资料第6433页 > MRF5S19130
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Suitable for TDMA, CDMA and multicarrier amplifier applications. RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts, IDQ = | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 |   | ||
Suitable for TDMA, CDMA and multicarrier amplifier applications. RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts, IDQ = | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD | Motorola 摩托罗拉 | | ||
N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance for VDD | Motorola 摩托罗拉 | | ||
1930-1990 MHz, 26 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistors 文件：433.62 Kbytes Page：12 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
RF Power Field Effect Transistors 文件：433.62 Kbytes Page：12 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：SOT-957A 包装：卷带（TR） 描述：FET RF 65V 1.99GHZ NI-880 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：NI-880S 包装：卷带（TR） 描述：FET RF 65V 1.99GHZ NI-880S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
RF Power Field Effect Transistors 文件：433.62 Kbytes Page：12 Pages | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
1990 MHz, 26 W AVG., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFET | ETC 知名厂家 | ETC | | |
1990 MHz, 26 W AVG., 2 x N-CDMA, 28 V Lateral N-Channel RF Power MOSFET | ETC 知名厂家 | ETC | |
MRF5S19130产品属性
- 类型
描述
- 型号
MRF5S19130
- 功能描述
射频MOSFET电源晶体管 HV5 28V 26W WCDMA NI880H
- RoHS
否
- 制造商
Freescale Semiconductor
- 配置
Single
- 频率
1800 MHz to 2000 MHz
- 增益
27 dB
- 输出功率
100 W
- 封装/箱体
NI-780-4
- 封装
Tray
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FREESCALE |
22+ |
SMD |
22 |
只做原装正品 |
|||
Freescale |
06+ |
SMD |
22 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FREESCALE/飞思卡尔 |
25+ |
SMD |
32000 |
FREESCALE/飞思卡尔全新特价MRF5S19130HR3即刻询购立享优惠#长期有货 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
恩XP |
23+ |
NI880 |
8000 |
只做原装现货 |
|||
FESSCALE |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
恩XP |
22+ |
NI880 |
9000 |
原厂渠道,现货配单 |
|||
FREESCALE/飞思卡尔 |
25+ |
SMD |
860000 |
明嘉莱只做原装正品现货 |
|||
FREESCALE/飞思卡尔 |
24+ |
SMD |
60100 |
郑重承诺只做原装进口现货 |
|||
FREESCAL |
22+ |
NI-880 |
20000 |
公司只有原装 品质保障 |
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