The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications at frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

• Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts,

IDQ = 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz

IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)

1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured

over a 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz. Distortion

Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and

f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01 Probability on CCDF.

Output Power — 26 Watts Avg.

Power Gain — 13 dB

Efficiency — 25

IM3 — -37 dBc

ACPR — -51 dB

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz, 110 Watts CW Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Qualified Up to a Maximum of 32 V Operation

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.