位置：首页 > IC中文资料第6466页 > MRF5S19100H
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD | Motorola 摩托罗拉 |   | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, ID | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD | Motorola 摩托罗拉 | | ||
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD | Motorola 摩托罗拉 | | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, ID | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：NI-780 包装：卷带（TR） 描述：FET RF 65V 1.99GHZ NI-780 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：NI-780S 包装：卷带（TR） 描述：FET RF 65V 1.99GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
MRF5S19100H产品属性
- 类型
描述
- 型号
MRF5S19100H
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOTOROLA/摩托罗拉 |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
|||
FREESCALE |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
|||
恩XP |
22+ |
NI780 |
9000 |
原厂渠道,现货配单 |
|||
FREESCALE/飞思卡尔 |
22+ |
NA |
35000 |
原装现货,假一罚十 |
|||
MOTOROLA |
17+ |
NI-780S |
9600 |
只做全新进口原装,现货库存 |
|||
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FREESCALE/飞思卡尔 |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Freescale |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
FREESCALE |
05/06+ |
60 |
全新原装100真实现货供应 |
||||
MOTOROLA |
24+ |
NI-780S |
26200 |
原装现货,诚信经营! |
MRF5S19100H芯片相关品牌
MRF5S19100H规格书下载地址
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