位置：首页 > IC中文资料第6466页 > MRF5S19100H
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
MRF5S19100H | 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs | ETC 知名厂家 | ETC |   |
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD | Motorola 摩托罗拉 | | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, ID | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD | Motorola 摩托罗拉 | | ||
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD | Motorola 摩托罗拉 | | ||
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. • Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts, ID | freescaleFreescale Semiconductor, Inc 飞思卡尔飞思卡尔半导体 | | ||
封装/外壳：NI-780 包装：卷带（TR） 描述：FET RF 65V 1.99GHZ NI-780 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | | |
封装/外壳：NI-780S 包装：卷带（TR） 描述：FET RF 65V 1.99GHZ NI-780S 分立半导体产品 晶体管 - FET，MOSFET - 射频 | ETC 知名厂家 | ETC | |
MRF5S19100H产品属性
- 类型
描述
- 型号
MRF5S19100H
- 制造商
MOTOROLA
- 制造商全称
Motorola, Inc
- 功能描述
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FREESCALE/飞思卡尔 |
24+ |
NA/ |
138 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
MOTOROLA |
23+ |
NI-780S |
8000 |
全新原装假一赔十 |
|||
MOTOROLA |
20+ |
高频管 |
29516 |
高频管全新原装主营-可开原型号增税票 |
|||
恩XP |
22+ |
NI780S |
9000 |
原厂渠道,现货配单 |
|||
FREESCALE |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
Freescale |
NA |
5500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
FREE/MOT |
24+ |
SMD |
5632 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
FREESCALE/飞思卡尔 |
22+ |
N/A |
12245 |
现货,原厂原装假一罚十! |
|||
FREESCALE |
21+ |
NA |
12820 |
只做原装,质量保证 |
|||
FREESCALE |
05/06+ |
60 |
全新原装100真实现货供应 |
MRF5S19100H芯片相关品牌
MRF5S19100H规格书下载地址
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