The RF MOSFET Line

RF Power Field Effect Transistors

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.

• Typical 2-Carrier N-CDMA Performance: VDD = 28 Volts,

IDQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band. IS-95 (Pilot,

Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =

1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01 Probability on CCDF.

Power Gain — 13.9 dB

Drain Efficiency — 25.5

IM3 @ 2.5 MHz Offset — -36.5 dBc @ 1.2288 MHz Channel Bandwidth

ACPR @ 885 kHz Offset — -50.7 dBc @ 30 kHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched, Controlled Q, for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40µ″ Nominal.

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.