RF POWER FIELD EFFECT TRANSISTOR

RF Power Field Effect Transistor The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications

RF POWER FIELD EFFECT TRANSISTOR

RF Power Field Effect Transistor The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cell

封装/外壳：NI-1230 包装：卷带（TR） 描述：FET RF 65V 1.99GHZ NI-1230 分立半导体产品 晶体管 - FET，MOSFET - 射频

1930-1990 MHz, 38 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFET

封装/外壳：NI-1230 包装：卷带（TR） 描述：FET RF 65V 1.99GHZ NI-1230 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：385.77 Kbytes Page：12 Pages

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET

文件：385.77 Kbytes Page：12 Pages

1990 MHz, 38 W AVG., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET