RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFET

Designed for W-CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

• Typical 2-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 1600 mA,

Pout = 38 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84

MHz, PAR = 8.5 dB @ 0.01 Probability on CCDF.

Power Gain — 14 dB

Drain Efficiency — 26

IM3 @ 10 MHz Offset — -37.5 dBc in 3.84 MHz Channel Bandwidth

ACPR @ 5 MHz Offset — -41 dBc in 3.84 MHz Channel Bandwidth

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW Output Power

Features

• Characterized with Series Equivalent Large-Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 VDD Operation

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Low Gold Plating Thickness on Leads, 40μ″ Nominal.

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.