HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure — NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA • High Power Gain —

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low Noise Figure — NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA • High Power Gain —

The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz

The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz Designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. • Low noise figure — NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF587 is Designed for High Linearity Power Amplifier Applications up to 500 MHz. FEATURES: • PG = 16 dB Typical at 220 W/500 MHz • Low Noise Figure • Diffused Ballast Resistors • Omnigold™ Metalization System

Bipolar

Designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications. ·Low Noise Figure: NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA\n·Low Intermodulation Distortion: TB3 = –70 dB, DIN = 125 dB µV\n·High Power Gain: GU(max) = 16.5 dB (typ.) @ f = 500 MHz\n·All Gold Metal System\n·Ion Implanted\n·High fT — 5.5 GHz\n·Nichrome Emitter Ballast Resistors;

The RF Line NPN Silicon High Frequency Transistor

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封装/外壳：244A-01 包装：托盘 描述：TRANS RF NPN 17A 200MA 244A-01 分立半导体产品 晶体管 - 双极（BJT）- 射频

HIGH-FREQUENCY TRANSISTOR NPN SILICON

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon High Frequency Transistor

文件：859.54 Kbytes Page：12 Pages

The RF Line NPN Silicon High Frequency Transistor

文件：859.54 Kbytes Page：13 Pages

NPN high-voltage transistors

DESCRIPTION NPN transistors in a TO-202 plastic package. FEATURES • Low feedback capacitance. APPLICATIONS • For use in video output stages of black and white and colour television receivers.

CATV amplifier modules

DESCRIPTION Hybrid amplifier modules for CATV systems operating over a frequency range of 40 to 550 MHz at a voltage supply of 24 V (DC). The BGY586 is intended for use as a pre-amplifier and BGY587 as a final amplifier. FEATURES • Excellent linearity • Extremely low noise • Silicon nitride p

Silicon Diode Ultra Fast Switch

Features: ● Super Fast Switching Speed ● High Current Capability ● High Surge Current Capability ● Low Forward Voltage Drop ● High Reliability ● DO41 Type Package

1GHz INPUT DIVIDE BY 2, 4, 8 PRESCALER IC FOR PORTABLE SYSTEMS

1GHz INPUT DIVIDE BY 2, 4, 8 PRESCALER IC FOR PORTABLE SYSTEMS PPB1509GV is a divide by 2, 4, 8 prescaler IC for portable radio or cellular telephone applications. PPB1509GV is a shrink package version of PPB587G so that this small package contributes to reduce the mounting space. PPB1509GV is m