The RF Line

NPN Silicon High-Frequency Transistor

. . . designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.

• Low Noise Figure —

NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA

• High Power Gain —

GU(max) = 16.5 dB (Typ) @ f = 500 MHz

• Ion Implanted

• All Gold Metal System

• High fT — 5.5 GHz

• Low Intermodulation Distortion:

TB3 = –70 dB

DIN = 125 dB µV

• Nichrome Emitter Ballast Resistors