The RF Line NPN Silicon High Frequency Transistor

Noise Figure 3.0 dB@ 500MHz

Designed for use in high–gain, low–noise, ultra–linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.

• Low noise figure —

NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA

• High power gain —

GU(max) = 16.5 dB (typ.) @ f = 500 MHz

• Ion implanted

• All gold metal system

• High fT — 5.5 GHz

• Low intermodulation distortion:

TB3 = –70 dB

DIN = 125 dB V

• Nichrome emitter ballast resistors