RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：带 描述：RF TRANS NPN 15V 5GHZ 8SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

RF/Microwave Si BJT Power Devices & Pallets

BiMOS II 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

The UCN5812AF/EPF combine a 20-bit CMOS shift register, data latches, and control circuitry with high-voltage bipolar source drivers and active DMOS pull-downs for reduced supply current requirements. Although designed primarily for vacuum-fluorescent displays, the high-voltage, highcurrent output

BiMOS II 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

The UCN5812AF/EPF combine a 20-bit CMOS shift register, data latches, and control circuitry with high-voltage bipolar source drivers and active DMOS pull-downs for reduced supply current requirements. Although designed primarily for vacuum-fluorescent displays, the high-voltage, highcurrent output

BiMOS II 20-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS FOR -40 Degrees Celcious TO 85 Degrees Celcious OPERATION

The UCN5812AF/EPF combine a 20-bit CMOS shift register, data latches, and control circuitry with high-voltage bipolar source drivers and active DMOS pull-downs for reduced supply current requirements. Although designed primarily for vacuum-fluorescent displays, the high-voltage, highcurrent output

HIGH PERFORMANCE FLEXIBLE 1-1/4 VALVE

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General Purpose Oscilloscope Probes

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