RF Power Field Effect Transistors

Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier applications. • Specified Two-Tone Performance @ 2000 MHz, 26 Volts Output Power ó 10 Watts PEP Power Gain ó 10.5 dB

封装/外壳：NI-200S 包装：卷带（TR） 描述：FET RF 65V 2GHZ NI-200S 分立半导体产品 晶体管 - FET，MOSFET - 射频

2000 MHz, 10 W, 26 V Lateral N-Channel Broadband RF Power MOSFET