RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1990 MHz, 26 Volts

1930-1990 MHz, 90 W, 26 V Lateral N-Channel RF Power MOSFETs

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1990 MHz, 26 Volts

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1

RF Power Field Effect Transistors

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1990 MHz, 26 Volts

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications. • Typical CDMA Performance: 1

封装/外壳：NI-880S 包装：卷带（TR） 描述：FET RF 65V 1.93GHZ NI-880S 分立半导体产品 晶体管 - FET，MOSFET - 射频

90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), wide-band code division multiple access (W-CDMA), global system for mobile commun

90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), wide-band code division multiple access (W-CDMA), global system for mobile commun

90 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

Introduction The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), wide-band code division multiple access (W-CDMA), global system for mobile commun