The RF MOSFET Line

RF Power Field Effect Transistors

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for Class AB PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM, and multicarrier amplifier applications.

• Typical CDMA Performance: 1990 MHz, 26 Volts

IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13

Output Power — 9 Watts

Power Gain — 10 dB

Adjacent Channel Power —

885 kHz: –47 dBc @ 30 kHz BW

1.25 MHz: –55 dBc @ 12.5 kHz BW

2.25 MHz: –55 dBc @ 1 MHz BW

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 90 Watts (CW) Output Power

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.