160 Amp Rectifier 20 to 100 Volts Schottky Barrier

Features · Metal of siliconrectifier, majonty carrier conducton · Guard ring for transient protection · Low power loss high efficiency · High surge capacity, High current capability

Silicon Power Schottky Diode

Features • High Surge Capability • Types from 20 V to 40V VRRM • Isolated to Plate • Not ESD Sensitive

SCHOTTKY DIODES MODULE TYPE 160A

Features High Surge Capability Types Up to 100V VRRM

封装/外壳：TO-249AB 包装：散装 描述：DIODE MODULE 30V 160A TO249AB 分立半导体产品 二极管 - 整流器 - 阵列

Silicon Power Schottky Diode

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Diode Schottky 30V 160A 3-Pin(3+Tab) TO-249AB

Schottky Diodes

Schottky Rectifiers

Schottky Diode

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封装/外壳：TO-249AB 包装：散装 描述：DIODE SCHOTTKY 30V 80A TO249AB 分立半导体产品 二极管 - 整流器 - 阵列

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts

RF POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange. FEATURES • Input and output matching cell allows an easier design of circuits • Diffused emitter ballasting resistors providing excelle

N-channel TrenchMOS-TM logic level FET

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