DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT437A glued cap metal ceramic flange package with base connected to flange.

FEATURES

• Input and output matching cell

allows an easier design of circuits

• Diffused emitter ballasting resistors

providing excellent current sharing

and withstanding a high VSWR

• Interdigitated structure provides

high emitter efficiency

• Gold metallization realizes very

stable characteristics and excellent

lifetime

• Multicell geometry gives good

balance of dissipated power and

low thermal resistance.

APPLICATIONS

Common base class B power

amplifiers at 1.6 GHz. Also suitable

for operation in the frequency range

1.4 to 1.8 GHz.