RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amp

RF POWER FIELD EFFECT TRANSISTORS

The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amp

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 24 (7/32) AWG Tinned Copper 0.024 b) Insulation 0.016 Wall, Nom. PVC 0.056+/- 0.002 (1) Color(s) WHITE, BLACK, RED, GREEN, YELLOW, BLUE, BROWN ORANGE, SLATE, VIOLET, WHITE/BLACK, WHITE/RED WHITE/GREEN, WHITE/YELLOW, WHITE/BLUE WHITE

.187˝ Diameter Ground Pins – Female

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Customer Specification

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USB charging port on front panel

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Switching DC Power Supply with USB Charger

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