The RF MOSFET Line

RF Power Field Effect Transistors

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 12.5 volt mobile FM equipment.

• Specified Performance @ 175 MHz, 12.5 Volts

Output Power — 50 Watts

Power Gain — 12 dB

Efficiency — 50

• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 175 MHz, 2 dB Overdrive

• Excellent Thermal Stability

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Broadband–Full Power Across the Band: 135–175 MHz

• Broadband Demonstration Amplifier Information Available Upon Request

• In Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.