520 MHz, 8 W, 7.5 V Lateral N-Channel Broadband RF Power MOSFET

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5

RF Power Field Effect Transistor

RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET The MRF1517 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier appli

The RF MOSFET Line RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS

The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFETs The MRF1517T1 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common

Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 8 W, 7.5 V

RF Power Field Effect Transistor

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封装/外壳：PLD-1.5 包装：卷带（TR） 描述：FET RF 25V 520MHZ PLD-1.5 分立半导体产品 晶体管 - FET，MOSFET - 射频

RF Power Field Effect Transistor

文件：285.38 Kbytes Page：16 Pages

RF Power Field Effect Transistor

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LINEAR INTEGRATED CIRCUIT

2×6 W stereo power amplifier DESCRIPTION The CD1517 is an integrated class-B dual output amplifier in a plastic single inline medium power package with fin and a plastic heatdissipating dual inlinepackage. The device is primarily developed for multimedia applications. FEATURES - Requir

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5-TAP DIP DELAY LINE TD/TR = 3

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5-TAP DIP DELAY LINE

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Original Strain Relief Bushings

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