Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

PNP power transistors

DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose power applications, e.g. driver stages in hi-fi amplifiers and televisi

PNP SILICON TRANSISTORS

POWER TRANSISTORS PNP SILICON

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

PNP PLASTIC POWER TRANSISTORS

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: -1.5 A Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: -1.5 A Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon PNP Power Transistors

DESCRIPTION ·With TO-126 package ·High current ·Complement to type BD135/137/139 APPLICATIONS ·Driver stages in high-fidelity amplifiers and television circuits

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION. FEATURES • High Current. (Max. : -1.5A) • DC Current Gain : hFE=40Min. @IC=-0.15A • Complementary to BD139.

Plastic Medium Power Silicon PNP Transistor

Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available* • DC Current Gain − hFE = 40 (Min) @

Complementary Silicon Power Ttransistors

DESCRIPTION It is intented for use in power amplifier and switching applications.

PNP SILICON TRANSISTORS

Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Fe

PNP SILICON TRANSISTOR

DESCRIPTION The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP transistor, designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. The complementary NPN types are the BD135/BD137/ BD139.

TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD135, BD137 And BD139

EPITAXIAL SILICON POWER TRANSISTORS

PNP EPITAXIAL SILICON POWER TRANSISTORS Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Current ● Complement To BD135, BD137 And BD139

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: -1.5 A Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Silicon PNP transistor in a TO-126F Plastic Package.

Descriptions Silicon PNP transistor in a TO-126F Plastic Package. Features Complement to BD139. Applications Medium power linear and switching applications.

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

Complementary low voltage transistor

Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Fe

PNP Epitaxial Silicon Transistor

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications Medium Power Linear and Switching Applications

isc Silicon PNP Power Transistor

DESCRIPTION • With TO-126 package • High current • Complement to type BD135/137/139 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits

PNP General Purpose Transistor

FEATURES • High Current

Complementary low voltage transistor

Features ■ Products are pre-selected in DC current gain Application ■ General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.

NPN SILICON TRANSISTORS

Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Fe

PNP General Purpose Transistor

FEATURES High Current

Medium Power Linear and Switching Applications

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GERMANIOVE TRANZISTORY

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SEMICONDUCTORS

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TRANSISTOR (PNP)

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SILICON PLANAR EPITAXIAL POWER TRANSISTORS.

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封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS PNP 80V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 80V 1.5A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon NPN Power Transistors

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Complementary low voltage transistor

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PNP SILICON TRANSISTORS

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AEC-Q100 qualified

General Description BD14000EFV is a LSI IC designed as a self-controlled cell balancer. It has a built-in shunt-type power storage element balancer function that can respond to 4 to 6 cells. All the functions necessary in a cell balancer are built-in making power storage element cell balancing po

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

PNP SILICON TRANSISTORS

POWER TRANSISTORS PNP SILICON

PNP power transistors

DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose power applications, e.g. driver stages in hi-fi amplifiers and televisi

Plastic Medium Power Silicon PNP Transistor

1.5 AMPERE POWER TRANSISTORS PNP SILICON 45, 60, 80 VOLTS 10 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 136, 138, 140 are complementary with BD 135, 137, 139

PNP General Purpose Transistor

FEATURES • High Current

PNP General Purpose Transistor

FEATURES • High Current

Complementary low voltage transistor

Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Fe

PNP General Purpose Transistor

FEATURES High Current

Complementary low voltage transistor

Features ■ Products are pre-selected in DC current gain Application ■ General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.

PNP Epitaxial Silicon Transistor

Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−Free Devices

Medium Power Linear and Switching Applications

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

PNP power transistors

DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complements: BD135, BD137 and BD139. FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • General purpose power applications, e.g. driver stages in hi-fi amplifiers and televisi

PNP General Purpose Transistor

FEATURES • High Current

PNP General Purpose Transistor

FEATURES • High Current

Complementary low voltage transistor

Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are the BD135 and BD139, and the complementary PNP types are the BD136 and BD140. Fe

Complementary low voltage transistor

Features ■ Products are pre-selected in DC current gain Application ■ General purpose Description These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.

PNP General Purpose Transistor

FEATURES High Current

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Qualified and PPAP Capable also. Applications • Driver stages in hi-fi amplifier and television circuit. Discription Designed for use as Audio Amplifier and Drivers Utilizing

PNP Epitaxial Silicon Transistor

Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−Free Devices

PNP Epitaxial Silicon Transistor

Features • Complement to BD135, BD137 and BD139 respectively Applications • Medium Power Linear and Switching

PNP Epitaxial Silicon Transistor

Applications • Complement to BD135, BD137 and BD139 Respectively • These are Pb−Free Devices

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Qualified and PPAP Capable also. Applications • Driver stages in hi-fi amplifier and television circuit. Discription Designed for use as Audio Amplifier and Drivers Utilizing