N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) •

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) •

The RF MOSFET Line 30W, to 400MHz, 28V

Designed for wideband large signal output and drive stages up to 400 MHz range. N–Channel enhancement mode • Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency — 60 (Typical) • Small– and large–signal characterization • Typical performance a

RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF137 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Output and Driver Stage Applications up to 400 MHz.

The RF MOSFET Line 30W, to 400MHz, 28V

Designed for wideband large signal output and drive stages up to 400 MHz range. ·Guaranteed 28 V, 150 MHzPerformance - Output power = 30 W Minimum Gain = 13 dB Efficiency — 60% (Typ.)\n·100% Test for Load Mistmatch at all Phase Angelswith 30:1 VSWR\n·Typical Performance at 400 MHz, 28 Vdc, 30 W output = 7.7 dB gain\n·Small andLarge Signal Characterization\n·Excellent Th;

封装/外壳：211-07 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 65V 400MHZ 211-07 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line 30W, to 400MHz, 28V

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RF Power LDMOS Transistors

750 W连续波，700-1300 MHz，50 V LDMOS射频功率晶体管

RF Power LDMOS Transistors

RF Power LDMOS Transistor 750 W CW over 700-1300 MHz, 50 V

The RF MOSFET Line

文件：404.75 Kbytes Page：11 Pages

The RF MOSFET Line

文件：985.61 Kbytes Page：12 Pages

包装：盒 描述：MRF13750H REF BRD 915MHZ 750W 开发板，套件，编程器 射频评估和开发套件，开发板

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the

L-BAND SPDT SWITCH

DESCRIPTION The UPG137GV and UPG138GV are L-Band Single Pole Double Throw (SPDT) GaAs MMIC switches developed for digital cellular, PCS, and WLAN applications. These devices feature wide bandwidth, low insertion loss, and high P1dB. The UPG137GV operates on a +3 to +5 V control voltage, while the