N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) •

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal output and driver stages up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60 (Typical) •

The RF MOSFET Line 30W, to 400MHz, 28V

Designed for wideband large signal output and drive stages up to 400 MHz range. N–Channel enhancement mode • Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB Efficiency — 60 (Typical) • Small– and large–signal characterization • Typical performance a

RF POWER FIELD-EFFECT TRANSISTOR

DESCRIPTION: The ASI MRF137 is a N-Channel Enhancement MOSFET, Designed for Wideband Large Signal Output and Driver Stage Applications up to 400 MHz.

The RF MOSFET Line 30W, to 400MHz, 28V

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封装/外壳：211-07 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 65V 400MHZ 211-07 分立半导体产品 晶体管 - FET，MOSFET - 射频

The RF MOSFET Line 30W, to 400MHz, 28V

RF Power LDMOS Transistors

RF Power LDMOS Transistors

The RF MOSFET Line

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The RF MOSFET Line

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750 W连续波，700-1300 MHz，50 V LDMOS射频功率晶体管

包装：盒 描述：MRF13750H REF BRD 915MHZ 750W 开发板，套件，编程器 射频评估和开发套件，开发板

RF Power LDMOS Transistor 750 W CW over 700-1300 MHz, 50 V

HSS Stub Drills

Application For use on automatic and capstan lathes or portable drills. Ideal for hand drilling in thin sections of material.

Premier Supplier of Electronic Hardware

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RUGGED & LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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RUGGED and LIGHTWEIGHT ALUMINUM BATTERY HOLDERS

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Waveguide to Coaxial Adapter

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