Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

NPN power transistors

DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140 FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in hi-fi amplifiers and television circuits.

NPN SILICON TRANSISTORS

NPN Silicon Transistors For AF driver and output stages of medium performance

Medium Power Linear and Switching Applications

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High current • Complement to type BD136/138/140 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High current • Complement to type BD136/138/140 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits

Power Transistors NPN Silicon 45,60,80 Volts

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC = 150mAdc • Complementary with BD136, BD138, BD140

NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MARKING: FULL PART NUMBER

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available • DC Current Gain − hFE = 40 (Min) @

TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ◾ High Current(1.5A) ◾ Low Voltage(80V)

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Current ● Complement To BD136, BD138 And BD140

High Current

TRANSISTOR (NPN) FEATURES • High Current(1.5A) • Low Voltage(80V)

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Current ● Complement To BD136, BD138 And BD140

NPN EPITAXIAL SILICON POWER TRANSISTORS

NPN EPITAXIAL SILICON POWER TRANSISTORS Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS FEATURES * High current (max.1.5A) * Low voltage (max.60V)

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

SILICON PLANAR EPITAXIAL POWER TRANSISTORS. The BD136-BD138-BD140 are PNP Transistors They are recommended for driver stages in hi-fi amplifiers and television circuits. They are mounted in Jedec TO-126 plastic package. NPN complements are BD135-BD137-BD139. Compliance to RoHS.

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 1.5 A Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● High Current

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

SILICON NPN EPITAXIAL TYPE

FEATURES: . Designed for Complementary Use with BD136, BD138 and BD140.

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Qualified and PPAP Capable also. Applications • Driver stages in hi-fi amplifier and television circuit. Discription Designed for use as Audio Amplifier and Drivers Utilizing

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

GERMANIOVE TRANZISTORY

文件：1.9422 Mbytes Page：14 Pages

封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR） 描述：TRANS NPN 60V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Transistor

晶体管

1.5 A，60 V，NPN 双极功率晶体管

NPN SILICON TRANSISTORS

文件：181.14 Kbytes Page：3 Pages

Silicon NPN Power Transistors

文件：111.81 Kbytes Page：3 Pages

Power Transistors NPN Silicon 45,60,80 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC =

NPN Plastic Encapsulated Transistor

FEATURES • High current • Complement to BD136, BD138 and BD140

NPN SILICON TRANSISTORS

NPN Silicon Transistors For AF driver and output stages of medium performance

NPN power transistors

DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140 FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in hi-fi amplifiers and television circuits.

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Qualified and PPAP Capable also. Applications • Driver stages in hi-fi amplifier and television circuit. Discription Designed for use as Audio Amplifier and Drivers Utilizing

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

Power Transistors NPN Silicon 45,60,80 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC =

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

NPN power transistors

DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140 FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in hi-fi amplifiers and television circuits.

NPN Plastic Encapsulated Transistor

FEATURES • High current • Complement to BD136, BD138 and BD140

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Qualified and PPAP Capable also. Applications • Driver stages in hi-fi amplifier and television circuit. Discription Designed for use as Audio Amplifier and Drivers Utilizing

NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

NPN Plastic Encapsulated Transistor

FEATURES • High current • Complement to BD136, BD138 and BD140

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

NPN SILICON TRANSISTORS

NPN Silicon Transistors For AF driver and output stages of medium performance

Power Transistors NPN Silicon 45,60,80 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC =

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available • DC Current Gain − hFE = 40 (Min) @

NPN Silicon Epitaxial Power Transistor

NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing.

TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

NPN POWER TRANSISTORS

文件：115.53 Kbytes Page：3 Pages

封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN 60V 1.5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN Epitaxial Silicon Transistor

文件：142.43 Kbytes Page：5 Pages

NPN Epitaxial Silicon Transistor

文件：142.43 Kbytes Page：5 Pages

NPN Epitaxial Silicon Transistor

文件：142.43 Kbytes Page：5 Pages

NPN Epitaxial Silicon Transistor

文件：142.43 Kbytes Page：5 Pages

NPN Epitaxial Silicon Transistor

文件：142.43 Kbytes Page：5 Pages

NPN Epitaxial Silicon Transistor

文件：142.43 Kbytes Page：5 Pages

Medium Power Linear and Switching Applications

文件：84.68 Kbytes Page：3 Pages