BD137晶体管资料

  • BD137(-6...-16)别名:BD137(-6...-16)三极管、BD137(-6...-16)晶体管、BD137(-6...-16)晶体三极管

  • BD137(-6...-16)生产厂家:德国AEG公司_德国椤茨标准电器公司_荷兰飞利浦公司

  • BD137(-6...-16)制作材料:Si-NPN

  • BD137(-6...-16)性质:低频或音频放大 (LF)_功率放大 (L)

  • BD137(-6...-16)封装形式:直插封装

  • BD137(-6...-16)极限工作电压:60V

  • BD137(-6...-16)最大电流允许值:1.5A

  • BD137(-6...-16)最大工作频率:<1MHZ或未知

  • BD137(-6...-16)引脚数:3

  • BD137(-6...-16)最大耗散功率:12.5W

  • BD137(-6...-16)放大倍数

  • BD137(-6...-16)图片代号:B-21

  • BD137(-6...-16)vtest:60

  • BD137(-6...-16)htest:999900

  • BD137(-6...-16)atest:1.5

  • BD137(-6...-16)wtest:12.5

  • BD137(-6...-16)代换 BD137(-6...-16)用什么型号代替:BD167,BC177,BD228,BD235,BC439,3DA1C,

BD137价格

参考价格:¥0.8586

型号:BD13710STU 品牌:Fairchild 备注:这里有BD137多少钱,2025年最近7天走势,今日出价,今日竞价,BD137批发/采购报价,BD137行情走势销售排行榜,BD137报价。
型号 功能描述 生产厂家&企业 LOGO 操作
BD137

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE = 40 (Min) @ IC = 0.15 Adc • BD 135, 137, 139 are complementary with BD 136, 138, 140

Motorola

摩托罗拉

BD137

NPN power transistors

DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140 FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in hi-fi amplifiers and television circuits.

Philips

飞利浦

BD137

NPN SILICON TRANSISTORS

NPN Silicon Transistors For AF driver and output stages of medium performance

SIEMENS

西门子

BD137

Medium Power Linear and Switching Applications

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

BD137

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High current • Complement to type BD136/138/140 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits

SAVANTIC

BD137

Silicon NPN Power Transistors

DESCRIPTION • With TO-126 package • High current • Complement to type BD136/138/140 APPLICATIONS • Driver stages in high-fidelity amplifiers and television circuits

ISC

无锡固电

BD137

Power Transistors NPN Silicon 45,60,80 Volts

Features • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC = 150mAdc • Complementary with BD136, BD138, BD140

MCC

美微科

BD137

NPN SILICON TRANSISTOR

DESCRIPTION: The CENTRAL SEMICONDUCTOR BD135, BD137, and BD139 are NPN Silicon Epitaxial Planar Transistors designed for audio amplifier and switching applications. MARKING: FULL PART NUMBER

Central

BD137

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available • DC Current Gain − hFE = 40 (Min) @

ONSEMI

安森美半导体

BD137

TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

DGNJDZ

南晶电子

BD137

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ◾ High Current(1.5A) ◾ Low Voltage(80V)

KOOCHIN

灏展电子

BD137

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Current ● Complement To BD136, BD138 And BD140

JIANGSU

长电科技

BD137

High Current

TRANSISTOR (NPN) FEATURES • High Current(1.5A) • Low Voltage(80V)

DGNJDZ

南晶电子

BD137

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Current ● Complement To BD136, BD138 And BD140

JIANGSU

长电科技

BD137

NPN EPITAXIAL SILICON POWER TRANSISTORS

NPN EPITAXIAL SILICON POWER TRANSISTORS Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140

CDIL

BD137

NPN POWER TRANSISTORS

NPN POWER TRANSISTORS FEATURES * High current (max.1.5A) * Low voltage (max.60V)

UTC

友顺

BD137

SILICON PLANAR EPITAXIAL POWER TRANSISTORS

SILICON PLANAR EPITAXIAL POWER TRANSISTORS. The BD136-BD138-BD140 are PNP Transistors They are recommended for driver stages in hi-fi amplifiers and television circuits. They are mounted in Jedec TO-126 plastic package. NPN complements are BD135-BD137-BD139. Compliance to RoHS.

COMSET

BD137

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) Collector current ICM: 1.5 A Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

BD137

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES ● High Current

FS

BD137

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

SY

顺烨电子

BD137

SILICON NPN EPITAXIAL TYPE

FEATURES: . Designed for Complementary Use with BD136, BD138 and BD140.

TOSHIBA

东芝

BD137

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Qualified and PPAP Capable also. Applications • Driver stages in hi-fi amplifier and television circuit. Discription Designed for use as Audio Amplifier and Drivers Utilizing

MULTICOMP

易络盟

BD137

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

BD137

GERMANIOVE TRANZISTORY

文件:1.9422 Mbytes Page:14 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

BD137

封装/外壳:TO-225AA,TO-126-3 包装:卷带(TR) 描述:TRANS NPN 60V 1.5A TO126 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

BD137

NPN SILICON TRANSISTORS

文件:181.14 Kbytes Page:3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

BD137

Silicon NPN Power Transistors

文件:111.81 Kbytes Page:3 Pages

SAVANTIC

Power Transistors NPN Silicon 45,60,80 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC =

MCC

美微科

NPN Plastic Encapsulated Transistor

FEATURES • High current • Complement to BD136, BD138 and BD140

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

NPN SILICON TRANSISTORS

NPN Silicon Transistors For AF driver and output stages of medium performance

SIEMENS

西门子

NPN power transistors

DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140 FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in hi-fi amplifiers and television circuits.

Philips

飞利浦

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Qualified and PPAP Capable also. Applications • Driver stages in hi-fi amplifier and television circuit. Discription Designed for use as Audio Amplifier and Drivers Utilizing

MULTICOMP

易络盟

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

SY

顺烨电子

NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Power Transistors NPN Silicon 45,60,80 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC =

MCC

美微科

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

SY

顺烨电子

NPN power transistors

DESCRIPTION NPN power transistor in a TO-126; SOT32 plastic package. PNP complements: BD136, BD138 and BD140 FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in hi-fi amplifiers and television circuits.

Philips

飞利浦

NPN Plastic Encapsulated Transistor

FEATURES • High current • Complement to BD136, BD138 and BD140

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

Single Bipolar Transistor

Features • This product is available in AEC-Q101 Qualified and PPAP Capable also. Applications • Driver stages in hi-fi amplifier and television circuit. Discription Designed for use as Audio Amplifier and Drivers Utilizing

MULTICOMP

易络盟

NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Epitaxial Silicon Transistor

Features • Complement to BD136, BD138 and BD140 respectively Applications • Medium Power Linear and Switching

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Plastic Encapsulated Transistor

FEATURES • High current • Complement to BD136, BD138 and BD140

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

NPN Plastic Encapsulated Transistor

FEATURES High current Complement to BD136, BD138 and BD140

SY

顺烨电子

NPN SILICON TRANSISTORS

NPN Silicon Transistors For AF driver and output stages of medium performance

SIEMENS

西门子

Power Transistors NPN Silicon 45,60,80 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant (Note1) (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • DC Current Gain - hFE = 40 (Min) @IC =

MCC

美微科

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • Pb−Free Packages are Available • DC Current Gain − hFE = 40 (Min) @

ONSEMI

安森美半导体

NPN Silicon Epitaxial Power Transistor

NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing.

SEMTECH_ELEC

先之科半导体

TO-126 Plastic-Encapsulate Transistors

FEATURES High Current Complement To BD136, BD138 And BD140

DGNJDZ

南晶电子

NPN POWER TRANSISTORS

文件:115.53 Kbytes Page:3 Pages

UTC

友顺

封装/外壳:TO-225AA,TO-126-3 包装:散装 描述:TRANS NPN 60V 1.5A TO126-3 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

NPN Epitaxial Silicon Transistor

文件:142.43 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Epitaxial Silicon Transistor

文件:142.43 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Epitaxial Silicon Transistor

文件:142.43 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Epitaxial Silicon Transistor

文件:142.43 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Epitaxial Silicon Transistor

文件:142.43 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NPN Epitaxial Silicon Transistor

文件:142.43 Kbytes Page:5 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Medium Power Linear and Switching Applications

文件:84.68 Kbytes Page:3 Pages

SYC

Plastic Medium-Power Silicon NPN Transistors

文件:86.22 Kbytes Page:4 Pages

ONSEMI

安森美半导体

NPN POWER TRANSISTORS

文件:115.53 Kbytes Page:3 Pages

UTC

友顺

NPN POWER TRANSISTORS

文件:115.53 Kbytes Page:3 Pages

UTC

友顺

BD137产品属性

  • 类型

    描述

  • 型号

    BD137

  • 功能描述

    两极晶体管 - BJT 1.5A 60V 12.5W NPN

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    PNP 集电极—基极电压

  • VCBO

    集电极—发射极最大电压

  • VCEO

    - 40 V 发射极 - 基极电压

  • VEBO

    - 6 V

  • 增益带宽产品fT

    直流集电极/Base Gain hfe

  • Min

    100 A

  • 安装风格

    SMD/SMT

  • 封装/箱体

    PowerFLAT 2 x 2

更新时间:2025-8-11 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
22+
TO126
100000
代理渠道/只做原装/可含税
FAIRCHILD/仙童
24+
NA/
3707
原装现货,当天可交货,原型号开票
CJ/长晶
25+
TO126
54648
百分百原装现货 实单必成 欢迎询价
CJ/长电
20+
TO126
32970
原装优势主营型号-可开原型号增税票
三年内
1983
只做原装正品
ON
24+
TO-126-3
25000
ON全系列可订货
PH
1926+
TO-126
6852
只做原装正品现货!或订货假一赔十!
FSC/ON
23+
原包装原封 □□
862
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存
FSC
06+
TO-126F
10826
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ON/安森美
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!

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