Darlington Complementary Silicon Power Transistors

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) −

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear and Switching Applications

POWER TRANSISTORS(8.0A,60-100V,70W)

PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS 8.0 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 70 WATTS

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 1000(Min)@ IC= -4A • Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -4A • Complement to Type TIP132 APPLICATIONS • Designed for general-purpose amplifier and l

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135, TIP136 and

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135, TIP136 and

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP130, TIP131 and TIP132 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 4 A

Silicon PNP Darlington Power Transistors

DESCRIPTION • With TO-220C package • DARLINGTON • Collector saturation voltage • Complement to type TIP130/131/132 APPLICATIONS • Designed for general-purpose amplifier and low speed switching applications

PNP SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP130, TIP131 and TIP132 ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 1000 at 4 V, 4 A

PNP SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

PNP SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135, TIP136 and TIP

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135, TIP136 and TIP

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear and Switching Applications

封装/外壳：TO-220-3 包装：散装 描述：TRANS PNP DARL 100V 8A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Transistor

双极型晶体管/BJT-其他

达林顿互补硅功率晶体管

Silicon PNP Darlington Power Transistors

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Darlington Complementary Silicon Power Transistors

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 30 mAdc VCEO(sus) = 80 Vdc (Min) −

PLASTIC POWER TRANSISTORS

PLASTIC POWER TRANSISTORS Intended for use in Linear and Switching Applications

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