VHF POWER MOSFET

DESCRIPTION: The ASI MRF134 is intended for use in 28 VDC large signal Applications, from 2.0 to 400 MHz. FEATURES INCLUDE: • PG = 14 dB Typical at 150 MHz • Omnigold™ Metalization System • Class-A or AB

The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V

Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. N–Channel enhancement mode • Guaranteed 28V, 150 MHz performance Output power = 5.0 watts Minimum gain = 11 dB Efficiency = 55 (Typical) • Small– and large–signal characteriz

N-CHANNEL MOS BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB

RF Power Field-Effect Transistor

The RF MOSFETLine RF Power Field-Effect Transistor N-Channel Enhancement-Mode designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance Output Power = 5.0 Watts Minimum Gain = 11 dB Eff

The RF MOSFET Line: Broadband RF Power FET 5.0W, to 400MHz, 28V

Designed for wideband large–signal amplifier and oscillator Product Image applications up to 400 MHz range. ·N–Channel enhancement mode\n·Guaranteed 28V, 150 MHz Performance Output Power = 5.0 watts Minimum Gain = 11 dB Efficiency = 55% (Typ.\n·Smal landLarge Signal Characterization\n·Typical Performance at 400 MHz, 28V, 5.0W Output = 10.6 dB gain\n·100% Test for Load Mismatch at all Phase Angles ;

封装/外壳：211-07 包装：托盘 描述：FET RF 65V 400MHZ 211-07 分立半导体产品 晶体管 - FET，MOSFET - 射频

N.CHANNEL MOS BROADBAND RF POWER FET

文件：208.95 Kbytes Page：10 Pages

The RF MOSFET Line: Broadband RF Power FET

文件：498.77 Kbytes Page：12 Pages

VHF POWER MOSFET

DESCRIPTION: The ASI MRF134-39 is intended for use in 28 VDC large signal Applications, from 2.0 to 400 MHz. FEATURES INCLUDE: • PG = 14 dB Typical at 150 MHz • Omnigold™ Metalization System • Class-A or AB

Broadband RF Power FET

文件：498.77 Kbytes Page：12 Pages

The RF MOSFET Line: Broadband RF Power FET

文件：991.79 Kbytes Page：13 Pages

VHF POWER MOSFET

Zener Diode, 1 Watt 짹5 Tolerance

Features: • Zener Voltage 110V to 200V • Low Cost • Low Zener Impedance • Excellent Clamping • Easily Cleaned with Freon, Alcohol, Chlorothene, and Similar Solvents

Zener Diode, 1 Watt 짹5 Tolerance

Features: • Zener Voltage 110V to 200V • Low Cost • Low Zener Impedance • Excellent Clamping • Easily Cleaned with Freon, Alcohol, Chlorothene, and Similar Solvents

3-Terminal Adjustable Current Sources

文件：273.64 Kbytes Page：14 Pages

3-Terminal Adjustable Current Sources

文件：273.64 Kbytes Page：14 Pages